AOD413A 40V P-Channel MOSFET General Description Features The AOD413A uses advanced trench technology and V (V) = -40V DS design to provide excellent R with low gate I = -12A (V = -10V) DS(ON) D GS charge. With the excellent thermal resistance of the R < 44m (V = -10V) DS(ON) GS DPAK package, this device is well suited for high R < 66m (V = -4.5V) DS(ON) GS current load applications. 100% UIS Tested 100% Rg Tested TO252 DPAK D Top View Bottom View D D G S G S S G Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -40 V DS Gate-Source Voltage V 20 V GS T =25C -12 Continuous Drain C B,H Current T =100C I -12 C D A C Pulsed Drain Current I -30 DM C Avalanche Current I -20 AR C Repetitive avalanche energy L=0.1mH E 20 mJ AR T =25C 50 C P D B T =100C Power Dissipation 25 C W T =25C 2.5 A P DSM A Power Dissipation T =70C 1.6 A Junction and Storage Temperature Range T , T -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A,G Maximum Junction-to-Ambient t 10s 16.7 25 C/W R A,G JA Maximum Junction-to-Ambient Steady-State 40 50 C/W F Steady-State Maximum Junction-to-Case R 2 3 C/W JC Alpha & Omega Semiconductor, Ltd. www.aosmd.comAOD413A Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I = -250A, V =0V BV Drain-Source Breakdown Voltage -40 V D GS DSS V = -40V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J I Gate-Body leakage current V =0V, V = 20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I = -250A -1.7 -2 -3 V DS GS D GS(th) V = -10V, V = -5V I On state drain current -30 A GS DS D(ON) V = -10V, I = -12A 36 44 GS D R Static Drain-Source On-Resistance T =125C 52 65 m DS(ON) J V = -4.5V, I = -8A 52 66 GS D g Forward Transconductance V = -5V, I = -12A 22 S DS D FS I = -1A,V =0V V Diode Forward Voltage -0.76 -1 V S GS SD I Maximum Body-Diode Continuous Current -12 A S DYNAMIC PARAMETERS C Input Capacitance 900 1125 pF iss V =0V, V = -20V, f=1MHz C Output Capacitance 97 pF GS DS oss C Reverse Transfer Capacitance 68 pF rss V =0V, V =0V, f=1MHz R Gate resistance 14 GS DS g SWITCHING PARAMETERS Q (-10V) Total Gate Charge 16.2 21 nC g Q (-4.5V) Total Gate Charge V = -10V, V = -20V, 7.2 9.4 nC g GS DS I = -12A Q Gate Source Charge D 3.8 nC gs Q Gate Drain Charge 3.5 nC gd t Turn-On DelayTime 6.2 ns D(on) t Turn-On Rise Time V = -10V, V = -20V, R =1.6, 8.4 ns r GS DS L R =3 t Turn-Off DelayTime 44.8 ns GEN D(off) t Turn-Off Fall Time 41.2 ns f t I = -12A, dI/dt=100A/s 21.2 rr Body Diode Reverse Recovery Time F ns Q I = -12A, dI/dt=100A/s 13.8 nC rr Body Diode Reverse Recovery Charge F A: The value of R is measured with the device in a still air environment with T =25C. The power dissipation P and current rating I JA A DSM DSM are based on T =150C, using t 10s junction-to-ambient thermal resistance. J(MAX) B. The power dissipation P is based on T =175C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T =175C. J(MAX) D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC -20 E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. 20 F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175C. The SOA curve provides a single pulse ratin g. J(MAX) 2 G. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A H. The maximum current rating is limited by bond-wires. ST *This device is guaranteed green after data code 8X11 (Sep 1 2008). Rev4: April 2011 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com