Product Information


ASDM2301ZA/SOT23 electronic component of Ascend

MOSFET P Channel 20V 3A 1V @ 250uA 85mO @ 3A,4.5V SOT-23 RoHS

Manufacturer: Ascend
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 0.0495 ea
Line Total: USD 0.99

760 - Global Stock
Ships to you between
Fri. 06 Oct to Wed. 11 Oct
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
20 - Global Stock

Ships to you between
Fri. 06 Oct to Wed. 11 Oct

MOQ : 20
Multiples : 20
20 : USD 0.0447
200 : USD 0.0357
600 : USD 0.0306
3000 : USD 0.0277
9000 : USD 0.0251
21000 : USD 0.0238

Product Category
SOT - 23
Brand Category
Fet Type
Drain To Source Voltagevdss
20 V
Continuous Drain Current Id @ 25°C
3 A
Vgsth Max @ Id
1V @ 250uA
Rds On Max @ Id Vgs
85mO @ 3A,4.5V
Power Dissipation-Max Ta 25°C
1 W
Drain Source Voltage Vdss
20 V
Continuous Drain Current Id
3 A
Drain Source On Resistance Rdson@Vgs Id
85 mOhms @4.5V , 3A
Power Dissipation Pd
1 W
Gate Threshold Voltage Vgsth@Id
1 V @250uA
P Channel
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SemiconductorThe ASDM2301ZA/SOT23 is a MOSFET P-channel 20V 3A 1V @ 250uA 85mO @ 3A,4.5V SOT-23 RoHS (Restriction of Hazardous Substances) by Ascend Semiconductor. It is a 3.3mm wide surface mount package with 3 pins, 1 source, 1 drain, and 1 gate. It is equipped with P-channel FET technology allowing high-speed switching, meaning it can quickly turn off and on. This FET has a breakdown voltage of 20V, drain-source on voltage of 1V, drain current of 3A, gate-source threshold voltage of 4.5V, and drain-source on-resistance of 85mO. The maximum gate-source leakage current is 250uA.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free