Product Information

ASDM2301ZA/SOT23

ASDM2301ZA/SOT23 electronic component of Ascend

Datasheet
MOSFET P Channel 20V 3A 1V @ 250uA 85mO @ 3A,4.5V SOT-23 RoHS

Manufacturer: Ascend
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0495 ea
Line Total: USD 0.99

760 - Global Stock
Ships to you between
Fri. 06 Oct to Wed. 11 Oct
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
20 - Global Stock


Ships to you between
Fri. 06 Oct to Wed. 11 Oct

MOQ : 20
Multiples : 20
20 : USD 0.0447
200 : USD 0.0357
600 : USD 0.0306
3000 : USD 0.0277
9000 : USD 0.0251
21000 : USD 0.0238

     
Manufacturer
Ascend
Product Category
MOSFET
Category
MOSFET
Rohs
y
Package
SOT - 23
Brand Category
Ascend
Fet Type
PChannel
Drain To Source Voltagevdss
20 V
Continuous Drain Current Id @ 25°C
3 A
Vgsth Max @ Id
1V @ 250uA
Rds On Max @ Id Vgs
85mO @ 3A,4.5V
Power Dissipation-Max Ta 25°C
1 W
Drain Source Voltage Vdss
20 V
Continuous Drain Current Id
3 A
Drain Source On Resistance Rdson@Vgs Id
85 mOhms @4.5V , 3A
Power Dissipation Pd
1 W
Gate Threshold Voltage Vgsth@Id
1 V @250uA
Type
P Channel
Show Stocked Products With Similar Attributes. LoadingGif
Image Description
ASDM3050KQ-R electronic component of Ascend ASDM3050KQ-R
30V 50A 9mO@10V,25A 60W N Channel TO-252 MOSFETs ROHS
Stock : 311
ASDM3404ZA-R electronic component of Ascend ASDM3404ZA-R
30V 5.8A 18mΩ@10V,5.8A 1.4W 1.6V@250uA 32pF@15V N Channel 345pF@15V -55℃~+150℃@(Tj) SOT-23-3 MOSFETs ROHS
Stock : 600
ASDM30P30CTD electronic component of Ascend ASDM30P30CTD
30V 30A 15mΩ@10V,9A 17W 2.5V@250uA P Channel 15nC@10V +150℃@(Tj) DFN3x3-8 MOSFETs ROHS
Stock : 55
ASDM40R009NQ-R electronic component of Ascend ASDM40R009NQ-R
40V 200A 114W 1.1mΩ@10V,100A 2V@250uA 81pF@20V N Channel 5400pF@20V 45nC@10V -55℃~+150℃@(Tj) PDFN5x6-8 MOSFETs ROHS
Stock : 785
ASDM40N40E-R electronic component of Ascend ASDM40N40E-R
40V 40A 7.5mΩ@4.5V,20A 65W 1.6V@250uA 141pF@20V N Channel 1733pF@20V 18nC@10V -55℃~+150℃@(Tj) DFN3.3x3.3-8 MOSFETs ROHS
Stock : 335
ASDM40N60KQ-R electronic component of Ascend ASDM40N60KQ-R
40V 60A 5.8mΩ@10V,20A 65W 1.6V@250uA 190pF@20V N Channel 1800pF@20V 29nC@10V -55℃~+175℃@(Tj) TO-252-2L MOSFETs ROHS
Stock : 294
ASDM3080KQ-R electronic component of Ascend ASDM3080KQ-R
TO-252 MOSFETs ROHS
Stock : 747
ASDM3400ZB-R electronic component of Ascend ASDM3400ZB-R
30V 5.8A 29mΩ@10V,5.8A 1.4W 1.1V@250uA 77pF@15V N Channel 823pF@15V -55℃~+150℃@(Tj) SOT-23-3 MOSFETs ROHS
Stock : 90
ASDM12N65F-T electronic component of Ascend ASDM12N65F-T
TO-220F MOSFETs ROHS
Stock : 50
ASDM3010S-R electronic component of Ascend ASDM3010S-R
30V 9A 15mΩ@10V,8A 2.5W 1.5V@250uA 75pF@25V 2 N-Channel 685pF@25V 4.1nC@4.5V SOP-8 MOSFETs ROHS
Stock : 765
Image Description
NTTFS4928NTAG electronic component of ON Semiconductor NTTFS4928NTAG

N-Channel 30 V 7.3A (Ta), 37A (Tc) 810mW (Ta), 20.8W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Stock : 1

FDY3000NZ electronic component of ON Semiconductor FDY3000NZ

Transistor: N-MOSFET x2; unipolar; 20V; 0.6A; 0.625W; SOT563
Stock : 66000

SI1330EDL-T1-E3 electronic component of Vishay SI1330EDL-T1-E3

MOSFET 60V Vds 20V Vgs SC70-3
Stock : 1

NTR1P02LT1G electronic component of ON Semiconductor NTR1P02LT1G

MOSFET -20V -1.3A P-Channel
Stock : 680

SSM3J35AMFV,L3F electronic component of Toshiba SSM3J35AMFV,L3F

MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V
Stock : 1

RU30C8H electronic component of Ruichips RU30C8H

MOSFET N & P Trench 30V 8A,7A 2.4V @ 250uA 15 mΩ @ 8A,10V;25 mΩ @ 6A,10V SOP-8_150mil RoHS
Stock : 0

TDM3466 electronic component of Techcode TDM3466

MOSFET N Trench 40V 200A (Tc) 2.5V @ 250uA 2.1 mΩ @ 25A,10V TO-220 RoHS
Stock : 1

CRTD110N03L electronic component of CRMICRO CRTD110N03L

MOSFET N Trench 30V 20A (Tc) 1.8V @ 250uA 11 mΩ @ 12A,10V TO-252 RoHS
Stock : 1

SI2102-TP electronic component of Micro Commercial Components (MCC) SI2102-TP

N-Channel 20 V 2.1A (Tj) 200mW Surface Mount SOT-323
Stock : 1

HSBA3056 electronic component of HUASHUO HSBA3056

MOSFET N Channel 30V 73A 2.2V @ 250uA 3.9mΩ @ 20A,10V PRPAK5*6 RoHS
Stock : 1

SemiconductorThe ASDM2301ZA/SOT23 is a MOSFET P-channel 20V 3A 1V @ 250uA 85mO @ 3A,4.5V SOT-23 RoHS (Restriction of Hazardous Substances) by Ascend Semiconductor. It is a 3.3mm wide surface mount package with 3 pins, 1 source, 1 drain, and 1 gate. It is equipped with P-channel FET technology allowing high-speed switching, meaning it can quickly turn off and on. This FET has a breakdown voltage of 20V, drain-source on voltage of 1V, drain current of 3A, gate-source threshold voltage of 4.5V, and drain-source on-resistance of 85mO. The maximum gate-source leakage current is 250uA.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,