Product Information

ASDM3400ZB-R

ASDM3400ZB-R electronic component of Ascend

Datasheet
30V 5.8A 29mΩ@10V,5.8A 1.4W 1.1V@250uA 77pF@15V N Channel 823pF@15V -55℃~+150℃@(Tj) SOT-23-3 MOSFETs ROHS

Manufacturer: Ascend
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0771 ea
Line Total: USD 0.771

38 - Global Stock
Ships to you between
Thu. 11 Apr to Tue. 16 Apr
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
38 - Global Stock


Ships to you between
Thu. 11 Apr to Tue. 16 Apr

MOQ : 10
Multiples : 10
10 : USD 0.0771
100 : USD 0.0633
300 : USD 0.0566
3000 : USD 0.0466
6000 : USD 0.0425
9000 : USD 0.0405

     
Manufacturer
Product Category
Category
Rohs
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
LoadingGif

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entThe ASDM3400ZB-R is a N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with a minimum breakdown voltage of 30V, a high current rating of 5.8A, a low on-resistance of 29mO @ 10V, and a total power dissipation of 1.4W. It features a gate threshold voltage of 1.1V @ 250uA, an input capacitance of 77pF @ 15V, and an output capacitance of 823pF @ 15V. Additionally, this MOSFET is able to operate within a wide temperature range of -55? to +150? (Tj). It is a RoHS-compliant 3-pin SOT-23 package manufactured by Ascendent.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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