X-On Electronics has gained recognition as a prominent supplier of SI2333 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2333 MOSFETs are a product manufactured by Bourne. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2333 Bourne

Name: SI2333
Brand: Bourne
SKU: SI2333_Bourne
Availability: InStock
Rating: 5 (11 reviews)

Images are for reference only
See Product Specifications

Part No.	SI2333
Manufacturer:	Bourne
Category:	MOSFETs
Description:	MOSFET P Trench 12V 7.1A (Tc) 1V @ 250uA 35 mÎ© @ 5.1A,4.5V SOT-23 RoHS
Datasheet:	SI2333 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0972 ea
Line Total: USD 0.97

Availability - 9234
Ship by Fri. 06 Jun to Wed. 11 Jun

MOQ: 10 Multiples: 10
Pack Size: 10

SI2333 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

9234

Ship by Fri. 06 Jun to Wed. 11 Jun

MOQ : 10
Multiples : 10

10 : USD 0.0972
100 : USD 0.0816
300 : USD 0.0554
3000 : USD 0.0369
6000 : USD 0.0338
9000 : USD 0.032

Specifications

Manufacturer

Bourne Bourne

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

SOT - 23 SOT - 23

Brand Category

Bourne Bourne

Fet Type

p trench p trench

Drain To Source Voltagevdss

12 V 12 V

Continuous Drain Current Id @ 25°C

7.1 A (t C) 7.1 A (t C)

Vgsth Max @ Id

1v @ 250ua 1v @ 250ua

Rds On Max @ Id Vgs

35 m @ 5.1a,4.5v 35 m @ 5.1a,4.5v

Power Dissipation-Max Ta

1.25 W 1.25 W

Drain Source Voltage Vdss

12 V 12 V

Continuous Drain Current Id

7.1 A 7.1 A

Power Dissipation Pd

1.25 W 1.25 W

Drain Source On Resistance Rdson@Vgs Id

35 mOhms @4.5V , 5.1A 35 mOhms @4.5V , 5.1A

Gate Threshold Voltage Vgsth@Id

1 V @250uA 1 V @250uA

Type

P Channel P Channel

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We are delighted to provide the SI2333 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2333 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2333 with MOSFET P Trench 12V 7.1A (Tc) 1V @ 250uA 35 mO @ 5.1A,4.5V SOT-23 RoHS manufactured by Bourne is a power MOSFET ideal for integration into digital and hand-held applications. The device helps minimize power dissipation due to its low ON resistance. It features a dielectric strength of 350V and is rated for a 12V drain-source voltage, 7.1A Tc, 1V @ 500mA and a 35 mO @ 5.1A, 4.5V. The SI2333 is available in a SOT-23 package manufactured according RoHS standards.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

BORN may also be referenced as

Bourne Semicon (Shenzhen)

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Availability	Price	Buy Price	Quantity
9234 Ship by Fri. 06 Jun to Wed. 11 Jun MOQ : 10 Multiples : 10	10 : USD 0.0972 100 : USD 0.0816 300 : USD 0.0554 3000 : USD 0.0369 6000 : USD 0.0338 9000 : USD 0.032

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