Product Information

BXW60M1K2J

BXW60M1K2J electronic component of Bridgelux

Datasheet
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 240A; 271.7W

Manufacturer: Bridgelux
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 18.172 ea
Line Total: USD 18.17

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

BXW60M1K2J
Bridgelux

1 : USD 18.172
3 : USD 17.178

     
Manufacturer
Product Category
Technology
Category
Mounting
Type Of Transistor
Polarisation
Drain Current
On-State Resistance
Kind Of Package
Gate Charge
Kind Of Channel
Drain-Source Voltage
Case
Pulsed Drain Current
Features Of Semiconductor Devices
Gate-Source Voltage
Power Dissipation
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The BXW60M1K2J is a N-MOSFET transistor manufactured by Bridgelux. It has a unipolar structure, 1.2kV of drain-source Breakdown Voltage (BVDSS), 60A of continuous drain current (ID), 240A of drain current (Idm) in on-state, and 271.7W of maximum power dissipation, all of which are due to the use of Silicon Carbide (SiC). This transistor is ideal for applications requiring high voltage and power efficiency.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
BGL
BRIDGELUX
Bridgelux, Inc.

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