Product Information

SCM040600

SCM040600 electronic component of Celduc

Datasheet
MOSFET RELAY, 40A, 600VDC, PANEL

Manufacturer: Celduc
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

SCM040600
Celduc

1 : USD 251.6044
N/A

0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

SCM040600
Celduc

1 : USD 328.0246
N/A

     
Manufacturer
Product Category
Load Current
Relay Terminals
Load Voltage Max
On State Resistance Max
Isolation Voltage
Forward Current If
Product Range
Svhc
LoadingGif

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S/CON/SCM040600/D/19/12/14 Page 1/5 GB MOSFET BASED SCM040600 DC SOLID STATE RELAY Latest MOSFET technology generation. Ultra low on-state resistance. New innovative isolated driver ensuring fast power transistor turn on and off therefore low power transient. Ultra low output leakage current Low control current consumption Control voltage range 4.5-32VDC Triggered control input to avoid linear control risks Max. output peak 600VDC voltage Low conducted and radiated disturbances Nom. load current 40ADC with heatsink Control input In & case / Out Dimensions Load voltage range Load current range Connections Weight voltage range Insulation (WxHxD) 44.5 x 58.2 x 27 Depends on protection M3 round tabs 0 to 40A 4.5-32VDC 4kV 100g clamping voltage M5 round tabs (with heatsink) (mm) HIGH SIDE WIRING DIAGRAM LOW SIDE WIRING DIAGRAM Fig. 1 Fig. 2 (Load connected to -) (Load connected to +) See Instruction See Instruction sheet for sheet for selective selective the the right right protective protective components components (Red paths as (Red paths as short as possible) short as possible) Fig. 3 INTERNAL DIAGRAM Proud to serve you celduc Data given at Tambient=40C and subject to modification without previous notice r e l a i s celduc S/CON/SCM040600/D/19/12/14 r e l a i s Page 2/5 GB CONTROL INPUT CHARACTERISTICS CHARACTERISTIC LABEL VALUE INFO. Control voltage range Uc 4.5 32VDC Current consumption Ic 25 42mADC for control voltage range See fig. 5 Typical turn on voltage Ucontyp 4.3V Min. releasing voltage Ucoffmin 1VDC Typical releasing voltage Ucofftyp 3.5V Max. input voltage Ucmax 32VDC Max. reverse voltage -Ucmax 32VDC Max. reverse leakage current -Icmax 100A Input impedance Re Current limitation See fig. 5 POWER OUTPUT CHARACTERISTICS CHARACTERISTIC LABEL VALUE INFO. Mains voltage range Ue Depends on protection clamping voltage (D1) Non-repetitive peak voltage Utp 600V See Instruction Not integrated sheet for selective the right Overvoltage protection D1 A voltage clamping mean must be connected across the protective terminals 1 & 2 (see fig 1 & 2) components Ie=-47A Reverse voltage (internal diode) -Ut 1,2V Uc=0 Pulse width Max. repetitive avalanche current Iep 20A limited by Tj max Ut=50V Max. single pulse avalanche energy Eep 1800mJ Ie=10A Max. repetitive pulse avalanche Eep 1mJ Ie=20A energy Resistive Motor See fig. 7 Maximum nominal currents Ie Values with heatsink 40A Please consult us Non-repetitive peak overload Iepeak 140A See fig. 8 current Min. load current Iemin 0mA Max. leakage current Ielk 250ADC Utp Tjmax Iemax Tjmax Max. on-state resistance RDSon 140m Typ. output capacitance Cout 2.2nF Total = 1 Junction/case thermal resistance Rthjc 0.4K/W power per power element elements Built-in heatsink thermal Rthra 8K/W Tra=60C resistance vertically mounted Heatsink thermal time constant Tthra 10min Tra=60C Control inputs/power outputs Uimp 4kV insulation voltage Inputs/case insulation voltage Uimp 4kV Outputs/case insulation voltage Uimp 4kV Isolation resistance Rio 1G Isolation capacitance Cio <8pF Maximum junction temperature Tjmax 150C Storage ambient temperature Tstg -40->+100C Operating ambient temperature Tamb -40->+90C See fig. 7 Max. case temperature Tc 100C POWER CIRCUIT INPUT CIRCUIT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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