CBR35-010P SERIES
www.centralsemi.com
SILICON BRIDGE RECTIFIERS
DESCRIPTION:
35 AMP, 100 THRU 1000 VOLT
The CENTRAL SEMICONDUCTOR CBR35-010P series
devices are silicon, single phase, full wave bridge rectifiers
designed for general purpose applications. The molded
epoxy case has a built-in metal baseplate for heat sink
mounting. The device utilizes standard 0.25 FASTON
terminals.
MARKING: FULL PART NUMBER
CASE FP
MAXIMUM RATINGS: (T =25C unless otherwise noted) CBR35
A
SYMBOL -010P -020P -040P -060P -080P -100P UNITS
Peak Repetitive Reverse Voltage V 100 200 400 600 800 1000 V
RRM
DC Blocking Voltage V 100 200 400 600 800 1000 V
R
RMS Reverse Voltage V 70 140 280 420 560 700 V
R(RMS)
Average Forward Current (T=60C) I 35 A
C O
Peak Forward Surge Current I 400 A
FSM
2 2 2
I t Rating for Fusing (1ms<t<8.3ms) It 660 A s
RMS Isolation Voltage (case to lead) V 2500 Vac
iso
Operating and Storage
Junction Temperature T , T -65 to +150 C
J stg
Thermal Resistance 1.4 C/W
JC
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25C unless otherwise noted)
A
SYMBOL TEST CONDITIONS TYP MAX UNITS
I V =Rated V 10 A
R R RRM
I V =Rated V , T=125C 500 A
R R RRM A
V I=17.5A 1.2 V
F F
C V =4.0V, f=1.0MHz 300 pF
J R
R3 (24-June 2013)CBR35-010P SERIES
SILICON BRIDGE RECTIFIERS
35 AMP, 100 THRU 1000 VOLT
CASE FP - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
R3 (24-June 2013)
www.centralsemi.com