CMKD4448
SURFACE MOUNT
www.centralsemi.com
TRIPLE ISOLATED
DESCRIPTION:
HIGH SPEED SILICON
The CENTRAL SEMICONDUCTOR CMKD4448
SWITCHING DIODES
type contains three (3) Isolated High Speed Silicon
Switching Diodes, manufactured by the epitaxial planar
process, epoxy molded in an ULTRAmini surface
mount package, designed for applications requiring
high speed switching applications.
MARKING CODE: K48
SOT-363 CASE
MAXIMUM RATINGS: (T =25C) SYMBOL UNITS
A
Continuous Reverse Voltage V 75 V
R
Peak Repetitive Reverse Voltage V 100 V
RRM
Continuous Forward Current I 250 mA
F
Peak Repetitive Forward Current I 500 mA
FRM
Peak Forward Surge Current, tp=1.0s I 4.0 A
FSM
Peak Forward Surge Current, tp=1.0s I 1.0 A
FSM
Power Dissipation P 325 mW
D
Operating and Storage Junction Temperature T , T -65 to +175 C
J stg
Thermal Resistance 461 C/W
JA
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25C unless otherwise noted)
A
SYMBOL TEST CONDITIONS MIN MAX UNITS
I V=20V 25 nA
R R
BV I=5.0A 75 V
R R
BV I=100A 100 V
R R
V I=100mA 1.0 V
F F
C V =0, f=1.0MHz 4.0 pF
T R
t I =I =10mA, I =1.0mA, R=100 4.0 ns
rr R F rr L
R6 (19-September 2011)CMKD4448
SURFACE MOUNT
TRIPLE ISOLATED
HIGH SPEED SILICON
SWITCHING DIODES
SOT-363 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Anode D1
2) Anode D2
3) Anode D3
4) Cathode D3
5) Cathode D2
6) Cathode D1
MARKING CODE: K48
R6 (19-September 2011)
www.centralsemi.com