CMKD4448 TR

CMKD4448 SURFACE MOUNT www.centralsemi.com TRIPLE ISOLATED DESCRIPTION: HIGH SPEED SILICON The CENTRAL SEMICONDUCTOR CMKD4448 SWITCHING DIODES type contains three (3) Isolated High Speed Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini surface mount package, designed for applications requiring high speed switching applications. MARKING CODE: K48 SOT-363 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Continuous Reverse Voltage V 75 V R Peak Repetitive Reverse Voltage V 100 V RRM Continuous Forward Current I 250 mA F Peak Repetitive Forward Current I 500 mA FRM Peak Forward Surge Current, tp=1.0s I 4.0 A FSM Peak Forward Surge Current, tp=1.0s I 1.0 A FSM Power Dissipation P 325 mW D Operating and Storage Junction Temperature T , T -65 to +175 C J stg Thermal Resistance 461 C/W JA ELECTRICAL CHARACTERISTICS PER DIODE: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=20V 25 nA R R BV I=5.0A 75 V R R BV I=100A 100 V R R V I=100mA 1.0 V F F C V =0, f=1.0MHz 4.0 pF T R t I =I =10mA, I =1.0mA, R=100 4.0 ns rr R F rr L R6 (19-September 2011)CMKD4448 SURFACE MOUNT TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-363 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) Anode D2 3) Anode D3 4) Cathode D3 5) Cathode D2 6) Cathode D1 MARKING CODE: K48 R6 (19-September 2011) www.centralsemi.com