CMLD6001DO SURFACE MOUNT SILICON www.centralsemi.com DUAL, ISOLATED, OPPOSING DESCRIPTION: ULTRA LOW LEAKAGE The CENTRAL SEMICONDUCTOR CMLD6001DO SWITCHING DIODE type contains two (2) isolated opposing configuration, silicon switching diodes, manufactured by the epitaxial planar process, epoxy molded in an SOT-563 surface mount package. These devices are designed for switching applications requiring extremely low leakage. MARKING CODE: C60 SOT-563 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Continuous Reverse Voltage V 75 V R Peak Repetitive Reverse Voltage V 100 V RRM Continuous Forward Current I 250 mA F Peak Forward Surge Current, tp=1.0s I 4.0 A FSM Peak Forward Surge Current, tp=1.0s I 1.0 A FSM Power Dissipation P 250 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 500 C/W JA ELECTRICAL CHARACTERISTICS PER DIODE: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=75V 500 pA R R BV I=100A 100 V R R V I=1.0mA 0.85 V F F V I=10mA 0.95 V F F V I=100mA 1.1 V F F C V =0, f=1.0MHz 2.0 pF J R t I =I =10mA, I =1.0mA, R=100 3.0 s rr R F rr L R5 (15-June 2015)CMLD6001DO SURFACE MOUNT SILICON DUAL, ISOLATED, OPPOSING ULTRA LOW LEAKAGE SWITCHING DIODE SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) NC 3) Cathode D2 4) Anode D2 5) NC 6) Cathode D1 MARKING CODE: C60 R5 (15-June 2015) www.centralsemi.com