Product Information

CTLTVS6V2 TR

CTLTVS6V2 TR electronic component of Central Semiconductor

Datasheet
Central Semiconductor TVS Diodes - Transient Voltage Suppressors 35W Low Leakage TVS 5.8V to 6.6V 1.0uA
Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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CTLTVS6V2 TR
Central Semiconductor

1 : USD 1.2875
10 : USD 0.6141
100 : USD 0.3344
500 : USD 0.2692
1000 : USD 0.2137
2500 : USD 0.1988
5000 : USD 0.188
8000 : USD 0.1721
24000 : USD 0.1667
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Peak Surge Current
Height
Length
Operating Temperature Range
Type
Width
Brand
Mounting Style
Pd - Power Dissipation
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

CTLTVS6V2 www.centralsemi.com SURFACE MOUNT SILICON UNI-DIRECTIONAL DESCRIPTION: TRANSIENT VOLTAGE SUPPRESSOR The CENTRAL SEMICONDUCTOR CTLTVS6V2 is a low leakage, fast response silicon TVS packaged in an ultra small, ultra low profile TLM2D3D6 surface mount case. This device is designed to protect sensitive equipment against ESD damage. MARKING CODE: S TLM2D3D6 CASE APPLICATIONS: FEATURES: User interface protection Ultra small, ultra low profile 0.3mm x 0.6mm x 0.3mm Voltage rail protection leadless surface mount package Data line protection High peak pulse current capability Voltage clamping Low leakage current MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Peak Power Dissipation (8x20s) P 35 W PK Electrical Fast Transient (IEC 61000-4-4) (5x50ns) EFT 40 A ESD Voltage (IEC 61000-4-2, Air) V 15 kV ESD ESD Voltage (IEC 61000-4-2, Contact) V 8.0 kV ESD Operating and Storage Junction Temperature T , T -55 to +150 C J stg ELECTRICAL CHARACTERISTICS: (T =25C) V =1.0V MAX I =10mA A F F Maximum Maximum Maximum Typical Typical Typical Reverse Breakdown Test Reverse Clamping TLP Clamping Dynamic Junction Stand-off Voltage Current Leakage Voltage Voltage Resistance Capacitance Voltage Current (8x20s) (Note 1) (Note 1) 0V Bias V V I I I V V I V I R C RWM BR T T R RWM C PP CL PP DYN J MIN NOM MAX mA A VAVA pF V V V V 7.0 1.5 4.0 5.8 6.2 6.6 5.0 1.0 10.7 3.0 0.54 25 10 7.0 Note 1: Transmission Line Pulse (TLP) conditions: Z =50, tp=100ns 0 R3 (26-October 2015)CTLTVS6V2 SURFACE MOUNT SILICON UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR TLM2D3D6 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode MARKING CODE: S R3 (26-October 2015) www.centralsemi.com

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Central Semiconductor may also be referenced as

Central
Central Semi
CENTRAL SEMICONDUCTOR
Central Semiconductor Corp
Central Semiconductor Corp.

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