JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1440 TRANSISTOR (PNP) 1. BASE FEATURES z Low collector-emitter saturation voltage V CE(sat) 2. COLLECTOR 1 z For low-frequency output amplification 2 z Complementary to 2SD2185 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -Continuous -2 A C P Collector Power Dissipation 500 mW C T Junction Temperature 150 J T Storage Temperature -55~150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit V -50 V Collector-base breakdown voltage (BR)CBO I =-10A, I =0 C E Collector-emitter breakdown voltage V I =-1mA, I=0 -50 V (BR)CEO C B Emitter-base breakdown voltage V I =-10A, I =0 -5 V (BR)EBO E C Collector cut-off current I V =-50V, I=0 -1 A CBO CB E Emitter cut-off current I V =-5V, I=0 -1 EBO EB C A h V =-2V, I=-200mA 120 340 FE1 CE C DC current gain h V =-2V, I=-1A 60 FE2 CE C Collector-emitter saturation voltage V I =-1A, I=-50mA -0.3 V CE(sat) C B Base- emitter saturation voltage V I =-1A, I=-50mA -1..2V BE(sat) C B Transition frequency f V =-10V, I=50mA, f=200MHz 80 MHz T CE C C V =-10V, I =0, f=1MHz 60 pF Collector output capacitance ob CB E CLASSIFICATION OF h FE1 Rank R S Range 120-240 170-340 Marking 1L www.cj-elec.comwww.cj-elec.com 1 D,Nov,2015A,Jun,2014Typical Characteristics h I Static Characteristic FE C -0.22 800 V = -2V -1.0mA CE COMMON 0.20 - EMITTER -0.9mA T =25 a -0.8mA o T =100 C a - 0.15 -0.7mA 300 -0.6mA 200 -0.5mA - 0.10 o T =25 C a -0.4mA -0.3mA 100 - 0.05 -0.2mA I =-0.1mA B 50 0.00 - -- - - - - 01 -23 45- 67- 1E-3 - 0.01 0.1 - 1 2 COLLECTOR-EMITTER VOLTAGE V (V) CE COLLECTOR CURRENT I (A) C V I V I CEsat C BEsat C - - 1100 700 - 1000 - 900 - 800 - 100 - 700 T =25 a - 600 T =100 a T =100 a T =25 a - 500 - 400 =20 =20 - - 10 300 - - - 1E-4 - 1E-3 - 0.01 - 0.1 1 - 2 - 1E-4 1E-3 - 0.01 - 0.1 1 - 2 - COLLECTOR CURRENT I (A) C COLLECTOR CURRENT I (A) C C / C V / V P T ob ib CB EB c a 600 500 f=1MHz I =0 / I =0 E C o T =25 C 500 a 400 100 300 Cib 200 Cob 100 10 0 - 0.1 -1 -10 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T ( ) REVERSE VOLTAGE V (V) a www.cj-elec.comwww.cj-elec.com 2 D,Nov,2015A,Jun,2014 COLLECTOR-EMITTER SATURATION COLLECTOR CURRENT I (A) VOLTAGE V (mV) CAPACITANCE C (pF) C CEsat BASE-EMITTER SATURATION COLLECTOR POWER DISSIPATION VOLTAGE V (mV) DC CURRENT GAIN h BEsat P (mW) FE c