JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2302S N-Channel 20-V(D-S) MOSFET I SOT-23 V R MAX D (BR)DSS DS(on) 60m 4.5 V 2 0 V 2.1 A 1. GATE 115m 2.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET z z Load Switch for Portable Devices z DC/DC Converter MARKING Equivalent Circuit Maximum ratings (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 8 GS Continuous Drain Current (T =150) I 2.1 J D A Pulsed Drain Current I 10 DM Continuous Source-Drain Current(Diode Conduction) I 0.6 S Power Dissipation P 0.35 W D Thermal Resistance from Junction to Ambient (t 5s) R 357 JA /W Operating Junction T 150 J Storage Temperature T -55 ~+150 STG www.cj-elec.com 1 D,Aug,2015 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V VGS = 0V, ID =10A 20 (BR)DSS V Gate-threshold voltage VGS(th) VDS =V , ID =50A 0.65 0.95 1.2 GS 100 Gate-body leakage I VDS =0V, VGS =8V nA GSS 1 Zero gate voltage drain current I VDS =20V, VGS =0V A DSS VGS =4.5V, ID =3.6A 0.035 0.060 a Drain-source on-resistance rDS(on) VGS =2.5V, ID =3.1A 0.045 0.115 a Forward transconductance gfs VDS =5V, ID =3.6A 8 S Diode forward voltage V I =0.94A,V =0V 0.76 1.2 V SD S GS Dynamic Total gate charge Q 4.0 10 g Gate-source charge Q VDS =10V,VGS =4.5V,ID =3.6A 0.65 nC gs Gate-drain charge Q 1.5 gd Input capacitance C 300 iss Output capacitance C VDS =10V,VGS =0V,f=1MHz 120 pF oss Reverse transfer capacitance C 80 rss Switch ing Turn-on delay time td 7 15 (on) V =10V, DD Rise time tr 55 80 R =5.5, ID 3.6A, ns L Turn-off delay time td(off) 16 60 V =4.5V,Rg=6 GEN Fall time tf 10 25 Notes : a. Pulse Test : Pulse width300s, duty cycle 2%. www.cj-elec.com 2 D,Aug,2015