CJ3415 R15 Changjing Electronics Technology

CJ3415 R15 electronic component of Changjing Electronics Technology
CJ3415 R15 Changjing Electronics Technology
CJ3415 R15 MOSFETs
CJ3415 R15  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of CJ3415 R15 MOSFETs across the USA, India, Europe, Australia, and various other global locations. CJ3415 R15 MOSFETs are a product manufactured by Changjing Electronics Technology. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. CJ3415 R15
Manufacturer: Changjing Electronics Technology
Category: MOSFETs
Description: MOSFET P Trench 20V 4A 1V @ 250uA 50 mΩ @ 4A,4.5V SOT-23 (SOT-23-3) RoHS
Datasheet: CJ3415 R15 Datasheet (PDF)
Price (USD)
10: USD 0.0846 ea
Line Total: USD 0.85 
Availability : 6052
  
Ship by Thu. 27 Nov to Wed. 03 Dec
QtyUnit Price
10$ 0.0846
100$ 0.0674
300$ 0.059
3000$ 0.0331
6000$ 0.0297
9000$ 0.028

Availability 6052
Ship by Thu. 27 Nov to Wed. 03 Dec
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.0846
100$ 0.0674
300$ 0.059
3000$ 0.0331
6000$ 0.0297
9000$ 0.028

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CJ3415 R15 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CJ3415 R15 and other electronic components in the MOSFETs category and beyond.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3415 P-Channel 20-V(D-S) MOSFET SOT-23 I V R MAX D (BR)DSS DS(on) -4.5 V 50m -2.5V V 60m -2 0 -4 A 1. GATE -1.8V 73m 2. SOURCE 3. DRAIN APPLICATION FEATURE Load switch and in PWM applicatopns z z Excellent R , low gate charge,low gate voltages DS(ON) MARKING Equivalent Circuit D G S Maximum ratings (T =25 unless otherwise noted) a Value Parameter Symbol Unit Drain-Source Voltage V -20 DS V Gate-Source Voltage V 8 GS Continuous Drain Current (t10s) I -4.0 A D Maximum Power Dissipation (t10s) P 0.35 W D Thermal Resistance from Junction to Ambient R 357 /W JA Operating Junction Temperature T 150 J Storage Temperature T -55 ~+150 STG www.cj-elec.com 1 E,Aug,2015MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Units Static Parameters Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-250A -20 V Gate threshold voltage VGS(th) VDS =V , ID =-250A -0.3 -0.56 -1 GS 10 VDS =0V, VGS =8V Gate-body leakage current I GSS VDS =0V, VGS =4.5V 1 A Zero gate voltage drain current I VDS =-16V, VGS =0V -1 DSS VGS =-4.5V, ID =-4A 0.037 0.050 Drain-source on-state resistance(note1) RDS(on) VGS =-2.5V, ID =-4A 0.045 0.060 VGS =-1.8V, ID =-2A 0.056 0.073 Forward transconductance(note2) g VDS =-5V, ID =-4A 8 S FS Body diode voltage(note2) V I =-1A,VGS =0V -1 V SD S Dynamic Parameters (note3) Input capacitance C 1450 iss Output capacitance C VDS =-10V,VGS =0V,f =1MHz 205 pF oss Reverse transfer capacitance C 160 rss Gate resistance Rg VDS =0V,VGS =0V,f =1MHz 6.5 Switching Parameters Total gate charge Q 17.2 g VDS =-10V,VGS =-4.5V,ID =-4A nC Gate-Source charge Q 1.3 gs Gate-drain charge Q 4.5 gd Turn-on delay time (note3) td(on) 9.5 Turn-on rise time(note3) tr V =-10V, V =-4.5V 17 DS GS ns Turn-off delay time(note3) td(off) RGEN =3, R =2.5, 94 L Turn-off fall time(note3) tf 35 Notes: 1. Repetitive rating,pulse width limited by junction temperature. 2. Pulse Test : Pulse width300s, duty cycle2%. 3. These parameters have no way to verify. www.cj-elec.com 2 E,Aug,2015

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
CJ
Jiangsu Changjing Electronics Technology
Jiangsu Changjing Electronics Technology Co., Ltd.
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