The UMX3N Generation 3 with SOT-363 Bipolar Transistors - BJT ROHS manufactured by Changjing Electronics Technology is a surface-mount three-layer bipolar transistor. The product features an avalanche to breakdown voltage of 20-30V, an operating temperature range of -40 to 115C, a max collector current of 100mA, a collector-emitter voltage of 60V, and a forward current gain of 100-800. The product also features a DC current gain of 300, a maximum power dissipation of 300mW, and a pulse current capability of 1.5A. The device is available in reel tape packing, making it suitable for automatic placement.