Product Information

1N4148T-G

1N4148T-G electronic component of Comchip

Datasheet
Diodes - General Purpose, Power, Switching Fast Switch Diode 75V, 150mA

Manufacturer: Comchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

1N4148T-G
Comchip

1 : USD 0.1234
10 : USD 0.104
100 : USD 0.036
1000 : USD 0.0249
2500 : USD 0.018
10000 : USD 0.0159
20000 : USD 0.0132
50000 : USD 0.0125
100000 : USD 0.0121
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Recovery Time
Ir - Reverse Current
Series
Packaging
Pd - Power Dissipation
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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FastFast Switching Switching Diode Diode CCOOMMCCHHIPIP www.comchiptech.com 1N4148 / 1N4448 DO-35 High Speed 1.0 (25.4) Features Min. - Fast Switching Speed 0.079 (2.0) - General Purpose Rectification Max. - Silicon Epitaxial Planar Construction 0.157 (4.0) Max. Mechanical Data - Case: DO-35 - Terminals: Solderable per MIL-STD-202, Method 208 - Polarity: Cathode Band 1.0 (25.4) Min. - Weight: 0.13 grams (approx.) 0.024 (0.60) Max. Dimensions in inches and (millimeters) T = 25 C unless otherwise specified Maximum Ratings A Characteristic Symbol 1N4148 1N4448 Unit Non-Repetitive Peak Reverse Voltage V RM 100 V V Peak Repetitive Reverse Voltage RRM V 75 V Working Peak Reverse Voltage RWM V DC Blocking Voltage R RMS Reverse Voltage V 53 V R(RMS) Forward Continuous Current (Note 1) I 300 500 mA FM Average Rectified Output Current (Note 1) I 150 mA O Non-Repetitive Peak Forward Surge Current t = 1.0s 1.0 I A FSM t = 1.0 s 2.0 Power Dissipation (Note 1) 500 mW P d Derate Above 25 C 1.68 mW/ C Thermal Resistance, Junction to Ambient Air (Note 1) R 300 K/W JA Operating and Storage Temperature Range T ,T -65 to +175 C j STG T = 25 C unless otherwise specified Electrical Characteristics A Characteristic Symbol Min Max Unit Test Condition I = 10mA Maximum Forward Voltage 1N4148 1.0 F I = 5.0mA 1N4448 V 0.62 0.72 V F FM I = 100mA 1N4448 1.0 F 5.0 A V = 75V R 50 A V = 70V, T = 150 C R j Maximum Peak Reverse Current I RM 30 A V = 20V, T = 150 C R j 25 nA V = 20V R Capacitance C V = 0, f = 1.0MHz j 4.0 pF R I = 10mA to I =1.0mA F R Reverse Recovery Time t rr 4.0 ns V = 6.0V, R = 100 R L Notes: 1. Valid provided that device terminals are kept at ambient temperature. MDS0312005A Page 1FastFast Switching Switching Diode Diode CCOOMMCCHHIPIP www.comchiptech.com Ratings and Characteristic Curves (TA = 25C unless otherwise noted) 1000 10,000 100 1000 10 100 1.0 10 0.1 V = 20V R 1 0.01 0 100 200 01 2 T , JUNCTION TEMPERATURE (C) j V , INSTANTANEOUS FORWARD VOLTAGE (V) F Fig. 2, Leakage Current vs Junction Temperature Fig. 1 Forward Characteristics MDS0312005A Page 2 I , INSTANTANEOUS FORWARD CURRENT (mA) F I , LEAKAGE CURRENT (nA) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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