BAV99-G

Surface Mount Switching Diode COMCHIPCOMCHIP www.comchip.com.tw Voltage: 70 Volts BAV99 Thru BAW56 Current: 215mA Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertio For General Purpose Switching Applications High Conductance SOT-23 .119 (3.0) Mechanical data .110 (2.8) Case: SOT -23, Plastic .020 (0.5) Top View Approx. Weight: 0.008 gram 3 This diodes is also available in other configurations including a dual common cathode with type designation BAV70, a dual common anodes with type designation BAW56 and single chip inside with type 1 2 Designation BAL99 BAV99 BAL99 .037(0.95) .037(0.95) ANODE CATHODE 1 1 3 3 ANODE ANODE 2 2 CATHODE CATHODE ANODE CATHODE .103 (2.6) CATHODE ANODE 1 1 .020 (0.5) .020 (0.5) .086 (2.2) 3 3 CATHODE ANODE 2 2 Dimensions in inches (millimeters) ANODE CATHODE BAV70 BAW56 Maximum Ratings Rating Symbol Value Units V V Continuous Reverse Voltage 70 R DC I Peak Forward Current 215 mAdc F Peak Forward Surge Current I (surge) 500 mAdc FM Thermal Characteristics Characteristic Symbol Max Units Total Device Dissipation FR 5 Board(1) T = 25C 225 mW A P D Derate above 25C 1.8 mW/C R Thermal Resistance, Junction to Ambient 556 C/W JA Total Device Dissipation Alumina Substrate,(2) T = 25C 300 mW A P D Derate above 25C 2.4 mW/C R Thermal Resistance, Junction to Ambient 417 C/W JA C Junction and Storage Temperature T , T 55 to +150 J stg Electrical Characterics (TA = 25C unless otherwise noted) Characteristic (OFF CHARACTERISTICS) Symbol Max Units Min Reverse Breakdown Voltage ( I = 100 uAdc ) V 70 - Vdc (BR) (BR) Reverse Voltage Leakage Current V = 25 Vdc, T = 150C - 30 R J I V = 70 Vdc 2.5 uAdc R R - V = 70 Vdc, T = 150C - 50 R J C Diode Capacitance (V = 0, f = 1.0 MHz)) 1.5 pF D R Forward Voltage I = 1.0 mAdc 715 F - I = 10 mAdc - 855 F VF mV I = 50 mAdc - 1000 F I = 150 mAdc F - 1250 Trr Reverse Recovery Time (I = I = 10 mAdc, I = 1.0mAdc) R = 100 nS F R R(REC) L 6.0 1.FR5 = 1.0 X 0.75X 0.062 in. 2.Aluminum = 0.4X 0.3X 0.024 in. 99.5% aluminum. MDS0210001A Page 1 .006 (0.15)max056 (1.40) .006 (0.15) .047 (1.20) .002 (0.05) .044 (1.10) .035 (0.90)Surface Mount Switching Diode COMCHIP www.comchip.com.tw RATING AND CHARACTERISTIC CURVES (BAV99 Thru BAW56) 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H 10% rr 0.1 F 90% DUT I = 1.0 mA R(REC) 50 Output 50 Input I R Pulse Sampling V R Output Pulse Generator Oscilloscopes Input Signal (I = I = 10 mA Measured F R at I = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit 100 10 T A = 150C T = 85C T A A = 125C 1.0 10 T = 40C A T = 85C A 0.1 T = 55C 1.0 A T = 25C A 0.01 T = 25C A 0.1 0.001 0.6 0.8 1.0 0 10 20 30 40 50 0.2 0.4 1.2 V , Forward Voltage (V) V , Reverse Voltage (V) F R Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 0.64 0.60 0.56 0.52 0 24 6 8 V , Reverse Voltage (V) R Figure 4. Capacitance Page 2 MDS0210001A I , Forward Current (mA) (mA) F C , Diode Capacitance (pF) D I , Reverse Current (A) R