Small Signal Switching Diodes CDST-7000-G Reverse Voltage: 100 Volts Forward Current: 200 mA RoHS Device SOT-23 Features - Design for mounting on small surface. 0.118(3.00) 0.110(2.80) - High speed switching. 3 - High mounting capability, strong surge 0.055(1.40) 0.047(1.20) withstand, high reliability. 1 2 0.079(2.00) 0.071(1.80) Mechanical data - Case: SOT-23, molded plastic. 0.006(0.15) 0.003(0.08) - Terminals: Solderable per MIL-STD-750, 0.045(1.15) 0.035(0.90) method 2026. 0.100(2.55) 0.089(2.25) - Weight: 0.008 grams(approx.) 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Circuit Diagram Dimensions in inches and (millimeter) 3 1 2 Maximum Rating (at Ta=25C unless otherwise noted) Symbol Parameter Parameter Value Unit Non-Repetitive peak reverse voltage VRM 100 V Peak repetitive reverse voltage VRRM 75 V Working peak reverse voltage VRWM 75 V RMS reverse voltage VR(RMS) 53 V Average rectified output current IO 200 mA Non-repetitive peak forward surge current T = 1.0s IFSM 2 A Power dissipation 225 PD mW Thermal resistance Junction to ambient R JA 556 C/W Junction temperature range Tj -40 to +150 C Storage temperature range TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-B0014 Page 1 Comchip Technology CO., LTD.Small Signal Switching Diodes Electrical Characteristics (at Ta=25C unless otherwise noted) Symbol Parameter Conditions Min. Max. Unit Reverse breakdown voltage IR = 100 A VBR 100 V VR = 50V 1 Reverse voltage leakage current IR uA VR = 100V 3 0.70 IF = 1mA Forward voltage V VF IF = 10mA 0.82 IF = 100mA 1.1 Diode capacitance pF Cj VR = 0V, f = 1MHz 2 IF = IR = 10mA, Irr = 10mA Reverse recovery time Trr 4 nS Irr = 0.1 x IR, RL=100 RATING AND CHARACTERISTIC CURVES (CDST-7000-G) Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics 10000 200 Pulsed 100 O TA=100C TA=100 C 1000 10 TA=25C 100 O 1 TA=25 C 10 Pulsed 0.1 1 0 25 40 60 80 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Reverse Voltage, VR (V) Forward Voltage, VF (V) Fig.3 - Capacitance Characteristics Fig.4 - Power Derating Curve 250 1.4 TJ=25C Mounted on glass epoxy PCBs f=1MHz 200 1.3 150 1.2 100 1.1 50 0 0 0 4 8 12 18 20 0 25 50 75 100 125 150 Reverse Voltage, VR (V) Ambient Temperature, TA (C) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-B0014 Page 2 Comchip Technology CO., LTD. Capacitance Between Terminals, CT (pF) Forward Current, IF (mA) Reverse Current, IR (nA) Pow er Dissipation, PD (m W)