CDSV3-19-G Comchip

SMD Switching Diode CDSV3-19-G/20-G/21-G High Speed RoHS Device Features SOT-323 -Fast switching diode. 0.087(2.20) 0.070(1.80) -Surface mount package ideally for automatic 3 insertion. 0.054(1.35) 0.045(1.15) -For general purpose switching applications. 1 2 -High conductance. 0.006(0.15) 0.056(1.40) 0.002(0.05) 0.047(1.20) Mechanical data 0.087(2.20) 0.044(1.10) -Case: SOT-323 0.078(2.00) 0.035(0.90) -Terminals: Solder plated, solderable per MIL- STD-750, Method 2026. 0.004(0.10)max. -Marking: CDSV3-19-G KA8 0.016(0.40) 0.008(0.20) 0.004(0.10)min. CDSV3-20-G KT2 CDSV3-21-G KT3 Dimensions in inches and (millimeters) Maximum Rating (at Ta=25C unless otherwise noted) Unit Parameter Symbol Value Power dissipation PD 200 mW Forward current IF 200 mA CDSV3-19-G 120 Reverse voltage CDSV3-20-G VR 150 V CDSV3-21-G 200 O Junction and storage temperature TJ , TSTG -55 ~ +150 C Electrical Characteristics (at Ta=25C unless otherwise noted) Max Unit Parameter Symbol Test Conditions Min CDSV3-19-G 100 Reverse breakdown voltage CDSV3-20-G V(BR)R IR=100uA 150 V CDSV3-21-G 200 CDSV3-19-G VR=100V Reverse leakage current CDSV3-20-G IR VR=150V 0.1 UA CDSV3-21-G VR=200V IF=100mA 1 Forward voltage VF V IF=200mA 1.25 Diode capacitance VR=0V, f=1MHZ pF CD 5 Reverse recovery time trr IF=IR=30mA, Irr=0.1XIR 50 nS REV:A QW-B0025 Page 1SMD Switching Diode Characteristic Curves (CDSV3-19-G/20-G/21-G) Fig.1 - Forward Characteristics Fig.2 - Leakage Current vs Junction Temperature 1000 100 O TJ=25 C 100 10 10 1 1 0.1 0.1 0.01 0.01 0 0 1 2 100 200 TJ, Junction Temperature (C) VF, Forward Voltage (V) REV:A QW-B0025 Page 2 IF, Forward Current (mA) IR, Leakage Current (uA)