Product Information

CDSV3-19-G

CDSV3-19-G electronic component of Comchip

Datasheet
Diodes - General Purpose, Power, Switching VR=100V, IF=200mA
Manufacturer: Comchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

CDSV3-19-G
Comchip

1 : USD 0.4603
10 : USD 0.3052
100 : USD 0.1134
1000 : USD 0.0702
3000 : USD 0.0546
9000 : USD 0.045
24000 : USD 0.0425
45000 : USD 0.0413
99000 : USD 0.0375
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Pd - Power Dissipation
Brand
Maximum Diode Capacitance
Operating Temperature Range
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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Additional Infomation About Product

SMD Switching Diode CDSV3-19-G/20-G/21-G High Speed RoHS Device Features SOT-323 -Fast switching diode. 0.087(2.20) 0.070(1.80) -Surface mount package ideally for automatic 3 insertion. 0.054(1.35) 0.045(1.15) -For general purpose switching applications. 1 2 -High conductance. 0.006(0.15) 0.056(1.40) 0.002(0.05) 0.047(1.20) Mechanical data 0.087(2.20) 0.044(1.10) -Case: SOT-323 0.078(2.00) 0.035(0.90) -Terminals: Solder plated, solderable per MIL- STD-750, Method 2026. 0.004(0.10)max. -Marking: CDSV3-19-G KA8 0.016(0.40) 0.008(0.20) 0.004(0.10)min. CDSV3-20-G KT2 CDSV3-21-G KT3 Dimensions in inches and (millimeters) Maximum Rating (at Ta=25C unless otherwise noted) Unit Parameter Symbol Value Power dissipation PD 200 mW Forward current IF 200 mA CDSV3-19-G 120 Reverse voltage CDSV3-20-G VR 150 V CDSV3-21-G 200 O Junction and storage temperature TJ , TSTG -55 ~ +150 C Electrical Characteristics (at Ta=25C unless otherwise noted) Max Unit Parameter Symbol Test Conditions Min CDSV3-19-G 100 Reverse breakdown voltage CDSV3-20-G V(BR)R IR=100uA 150 V CDSV3-21-G 200 CDSV3-19-G VR=100V Reverse leakage current CDSV3-20-G IR VR=150V 0.1 UA CDSV3-21-G VR=200V IF=100mA 1 Forward voltage VF V IF=200mA 1.25 Diode capacitance VR=0V, f=1MHZ pF CD 5 Reverse recovery time trr IF=IR=30mA, Irr=0.1XIR 50 nS REV:A QW-B0025 Page 1SMD Switching Diode Characteristic Curves (CDSV3-19-G/20-G/21-G) Fig.1 - Forward Characteristics Fig.2 - Leakage Current vs Junction Temperature 1000 100 O TJ=25 C 100 10 10 1 1 0.1 0.1 0.01 0.01 0 0 1 2 100 200 TJ, Junction Temperature (C) VF, Forward Voltage (V) REV:A QW-B0025 Page 2 IF, Forward Current (mA) IR, Leakage Current (uA)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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