SMD ESD Protection Diode CPDQR5V0U-HF RoHS Device Halogen Free Features 0402/SOD-923F - Uni-directional ESD protection. 0.041(1.05) - IEC 61000-4-2 (ESD) 30KV(contact) 0.037(0.95) - Surface mount package. - Ultra small SMD package:0402. 0.026(0.65) 0.022(0.55) - High component density. Mechanical data - Case: 0402/SOD-923F standard package, 0.022(0.55) 0.018(0.45) molded plastic. - Terminals: Gold plated, solderable per 0.014(0.35) 0.010(0.25) MIL-STD-750,method 2026. - Mounting position: Any. - Weight: 0.001 grams(approx.). 0.020(0.50) Circuit Diagram 0.016(0.40) Dimensions in inches and (millimeter) Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter Conditions Value Unit Peak pulse power TP = 8/20us PPP 180 W Peak pulse current TP = 8/20us IPP 15 A IEC 61000-4-2(air) ESD 30 ESD capability kV IEC 61000-4-2(contact) ESD 30 Operation temperature range Tj -40~+125 C Storage temperature range TSTG -55~+150 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Working peak reverse voltage VRWM 5.0 V Forward voltage IF = 10mA VF 0.8 1.2 V Breakdown voltage IT = 1mA VBR 6 V Reverse leakage current IR 0.2 2.0 A VRWM = 5V IPP = 1A, TP = 8/20us 7.6 Clamping voltage IPP = 5A, TP = 8/20us VC 8 9.4 V IPP = 15A, TP = 8/20us 10 12 Junction capacitance pF VR = 0V, f = 1MHz CJ 130 Company reserves the right to improve product design , functions and reliability without notice. REV:F QW-G7002 Page 1 Comchip Technology CO., LTD.SMD ESD Protection Diode RATING AND CHARACTERISTIC CURVES (CPDQR5V0U-HF) Fig.1- 8/20us Peak Pulse Current Fig.2 - Power Rating Derating Curve Wave Form Acc. IEC 61000-4-5 120% 120 Test Waveform parameters Mounting on glass epoxy PCBs tf=8us Ta=25C Peak Valur Ipp td=20us 100 100% -t 80 80% e 60 60% 40 40% td= t Ipp /2 20 20% 0 0% 0 5 10 15 20 25 30 0 25 50 75 100 125 150 Time, (us) Ambient Temperature, ( C ) Fig.3 - Clamping Voltage Vs. Fig.4 - Forward Characteristic Peak Pulse Current 11 100 8/20us waveform 10 10 Ta=125C Ta=100C 9 8 Ta=75C Ta=50C Ta=25C 7 1 6 5 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 3 5 7 9 11 13 15 Forward Voltage, ( V ) Peak Pulse Current, (A) Fig.5 - Capacitance Between Terminals Characteristics 130 Ta=25C f=1MHZ 110 90 70 50 30 10 0 1 2 3 4 5 Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:F QW-G7002 Page 2 Comchip Technology CO., LTD. Capacitance Between Terminals, (PF) Clamping Voltage, (V) Percentage Of Ipp Forward Current, (mA) Power Rating, (%)