SMD ESD Protection Diode Comchip S M D D i o d e S p e c i a l i s t CPDU3V3UP-HF RoHS Device Halogen Free Features 0603/SOD-523F - Working voltage: 3.3V 0.071(1.80) 0.063(1.60) - Low leakage current. - Low operating and clamping voltages. 0.039(1.00) 0.031(0.80) Mechanical data - Case: 0603/SOD-523F standard package, molded plastic. 0.033(0.85) - Terminals: Gold plated, solderable per 0.027(0.70) MIL-STD-750,method 2026. 0.018(0.45) 0.012(0.30) - Marking code: E3V3 - Mounting position: Any 0.014(0.35) 0.011(0.28) - Weight: 0.003 gram(approx.). 0.030(0.75) 0.026(0.65) Circuit Diagram Dimensions in inches and (millimeter) Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Peak pulse power ( tp = 8/20 us) PPP 40 W Peak pulse current ( tp = 8/20 us) IPP 5 A ESD per IEC 61000-4-2(Air) 20 VESD kV ESD per IEC 61000-4-2(Contact) 15 Operating temperature Tj -55 to +125 C Storage temperature TSTG -55 to +125 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Reverse stand-off voltage VRWM 3.3 V Punch-through voltage IPT = 2uA VPT 3.5 V Snap-back voltage ISB = 50mA VSB 2.8 V Reverse leakage current VRWM = 3.3V IR 0.05 0.5 uA IPP = 1 A, tp=8/20us VC 5.5 V Clamping voltage IPP = 5 A, tp=8/20us VC 8.0 V Reverse clamping voltage IPPR = 1 A, tp=8/20us VCR 2.4 V Junction capacitance VR = 0 V, f = 1MHz Cj pF 12 16 Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-G7056 Page 1 Comchip Technology CO., LTD.SMD ESD Protection Diode Comchip S M D D i o d e S p e c i a l i s t RATING AND CHARACTERISTIC CURVES (CPDU3V3UP-HF) Fig.2 - Non-Repetitive Max. Peak Pulse Fig.1 - Definitions of Electrical Power vs. Pulse Time Characteristics 1 I IPPR 0.1 VRWM VPT VSB VC V IR VCR IPT ISB IPP 0.01 0.1 1 10 100 1000 Pulse Duration-tp(us) Fig.4 - Clamping Voltage Vs. Fig.3 - Power Rating Derating Curve Peak Pulse Current 110 16 100 14 90 12 80 70 10 60 8 50 Waveform 40 6 Parameters: tr=8us 30 td=20us 4 20 2 10 0 0 0 25 50 75 100 125 150 0 1 2 3 4 5 6 Peak Pulse Current,(A) Ambient Temperature, ( C ) Fig.6 - Junction Capacitance Vs. Fig.5 - Forward Voltage Vs. Reverse Voltage Forward Current 20 12 Waveform Parameters: 10 16 tr=8us td=20us 8 12 6 8 4 4 2 0 0 0 1 2 3 4 0 1 2 3 4 5 6 Reverse Voltage, (V) Forward Current,(A) Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-G7056 Page 2 Comchip Technology CO., LTD. Power Rating, (%) Forward Voltage, (V) Clamping Voltage, (V) Max. Peak Pulse Power-PPP(kW ) Normalized Capacitance - Cj (pF)