Product Information

MMBT5551-G

MMBT5551-G electronic component of Comchip

Datasheet
RF Bipolar Transistors VCEO=160V IC=600mA

Manufacturer: Comchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6237 ea
Line Total: USD 0.6237

2977 - Global Stock
Ships to you between
Thu. 11 Apr to Mon. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2858 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1

Stock Image

MMBT5551-G
Comchip

1 : USD 0.4485
10 : USD 0.3071
100 : USD 0.1944
1000 : USD 0.0874
3000 : USD 0.0748
9000 : USD 0.0575
24000 : USD 0.0541
45000 : USD 0.0506
99000 : USD 0.0437

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Transistor Type
Technology
Packaging
Type
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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General Purpose Transistor MMBT5551-G (NPN) RoHS Device Features SOT-23 - Epitaxial planar die construction. - Complementary PNP type available (MMBT5401-G). 0.118(3.00) - Ideal for medium power amplification and switching. 0.110(2.80) 3 0.055(1.40) Mechanical data 0.047(1.20) 1 2 - Case: SOT-23, molded plastic. 0.079(2.00) 0.071(1.80) - Terminals: Solderable per MIL-STD-750, method 2026. 0.006(0.15) 0.003(0.08) - Approx. weight: 0.008 grams(approx.). 0.041(1.05) 0.100(2.55) 0.035(0.90) 0.089(2.25) Circuit Diagram: 0.020(0.50) 0.004(0.10) max 0.012(0.30) 0.020(0.50) 0.012(0.30) Collector 3 Dimensions in inches and (millimeter) 1 Base 2 Emitter Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 6 V Collector current IC 600 mA Collector power dissipation PC 300 mW Thermal resistance from junction to ambient R JA 416 C/W Junction temperature range TJ 150 C Storage temperature range TSTG -55 ~ +150 C REV:B Company reserves the right to improve product design , functions and reliability without notice. QW-BTR20 Page 1 Comchip Technology CO., LTD.General Purpose Transistor Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit Collector-base breakdown voltage IC=100 A, IE=0 V(BR)CBO 180 V V * Collector-emitter breakdown voltage IC=1mA, IB=0 V(BR)CEO 160 V Emitter-base breakdown voltage IE=10 A, IC=0 V(BR)EBO 6 V Collector cut-off current VCB=120V, IE=0 ICBO 50 nA Emitter cut-off current VEB=4V, IC=0 IEBO 50 nA * VCE=5V, IC=1mA hFE(1) 80 DC current gain VCE=5V, IC=10mA * hFE(2) 100 200 * VCE=5V, IC=50mA hFE(3) 50 * IC=10mA, IB=1mA 0.15 V VCE(sat)1 Collector-emitter saturation voltage * IC=50mA, IB=5mA 0.20 V VCE(sat)2 IC=10mA, IB=1mA * VBE(sat)1 1 V Base-emitter saturation voltage IC=50mA, IB=5mA * VBE(sat)2 1 V Transition frequency VCE=10V, IC=10mA, f=100MHz 100 300 MHZ fT pF Collector output capacitance VCB=10V, IE=0, f=1MHz Cob 6 *Pulse test: pulse width 300s, duty cycle 2.0% RATING AND CHARACTERISTIC CURVES (MMBT5551-G) Fig.1 - Static Characteristic Fig.2 - hFE IC 18 500 COMMON COMMON EMITTER 90uA EMITTER Ta=25C VCE=5V Ta=100C 80uA 15 70uA 12 Ta=25C 60uA 100 50uA 9 40uA 6 30uA IB=20uA 3 0 0 1 10 100 200 0 2 4 6 8 10 12 Collector-Emitter Voltage, VCE (V) Collector Current, Ic (mA) REV:B Company reserves the right to improve product design , functions and reliability without notice. QW-BTR20 Page 2 Comchip Technology CO., LTD. Collector Current, IC (mA) DC Current Gain, hFE

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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