X-On Electronics has gained recognition as a prominent supplier of G4B Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. G4B Bipolar Transistors - BJT are a product manufactured by Commscope. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

G4B Commscope

G4B electronic component of Commscope
G4B Commscope
G4B Bipolar Transistors - BJT
G4B  Semiconductors

Images are for reference only
See Product Specifications
Part No. G4B
Manufacturer: Commscope
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm
Datasheet: G4B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 78.9862 ea
Line Total: USD 78.99 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ : 1
Multiples : 1
1 : USD 78.9862
35 : USD 23.814
75 : USD 18.5436
150 : USD 16.794

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Gain Bandwidth Product fT
Maximum Operating Temperature
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the G4B from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the G4B and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DMC206E2 Unit: mm Silicon NPN epitaxial planar type For high-frequency amplication DMC506E2 in Mini6 type package Features High transition frequency f T Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: D2 Basic Part Number Dual DSC2G02 (Individual) 1: Emitter (Tr1) 4: Collector (Tr2) 2: Emitter (Tr2) 5: Base (Tr1) Packaging 3: Base (Tr2) 6: Collector (Tr1) DMC206E20R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Panasonic Mini6-G4-B JEITA SC-74 Absolute Maximum Ratings T = 25C Code SOT-457 a Parameter Symbol Rating Unit (C1) (B1) (C2) Collector-base voltage (Emitter open) V 30 V CBO 6 5 4 Collector-emitter voltage (Base open) V 20 V Tr1 CEO Tr2 Tr2 Emitter-base voltage (Collector open) V 3 V EBO Tr1 Collector current I 15 mA C Total power dissipation P 300 mW 1 2 3 T (E1) (E2) (B2) Junction temperature T 150 C j Overall Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 30 V CBO C E Collector-emitter voltage (Base open) V I = 10 A, I = 0 3 V EBO E C Base-emitter voltage V V = 6 V, I = 1 mA 0.72 V BE CE C Forward current transfer ratio h V = 6 V, I = 1 mA 65 260 FE CE C 1 h * FE h ratio V = 6 V, I = 1 mA 0.50 0.99 FE CE C (Small/Large) Transition frequency f V = 6 V, I = 1 mA 450 650 MHz T CE C Reverse transfer capacitance(Common emitter) C V = 6 V, I = 1 mA, f = 10.7 MHz 0.6 pF re CE C Power gain PG V = 6 V, I = 1 mA, f = 100 MHz 24 dB CE C Noise gure NF V = 6 V, I = 1 mA, f = 100 MHz 3.3 dB CE C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Ratio between 2 elements * Publication date: January 2014 Ver. CED 1DMC206E2 DMC206E2 PT-Ta DMC206E2 IC-VCE DMC206E2 hFE-IC P T I V h I T a C CE FE C 350 20 200 T = 25C a V = 6 V CE 300 160 16 T = 85C a 110 A I = 120 A 100 A B 250 25C 12 120 200 90 A 80 A 150 40C 8 70 A 80 60 A 50 A 100 40 A 4 40 30 A 50 0 0 0 1 2 0 40 80 120 160 200 0 2 4 6 8 10 12 10 1 10 10 ( ) Ambient temperature T C Collector-emitter voltage V (V) Collector current I (mA) a CE C DMC206E2 IC-VBE DMC206E2 VCEsat-IC DMC206E2 Cob-VCB V I I V C V CE(sat) C C BE ob CB 2.0 10 20 I / I = 10 I = 0 C B E f = 1 MHz V = 6 V CE 25C T = 25C a 1.6 15 1 T = 85C a 1.2 40C 10 T = 85C a 0.8 25C 1 10 5 40C 0.4 2 0 10 0 1 2 0 0.2 0.4 0.6 0.8 1.0 1.2 10 1 10 10 1 10 100 Base-emitter voltage V (V) Collector current I (mA) Collector-base voltage V (V) BE C CB DMC206E2 fT-IC f I T C 1 600 V = 6 V CE T = 25C a 1 200 800 400 0 1 2 10 1 10 10 Collector current I (mA) C Ver. CED 2 Transition frequency f (MHz) Collector-emitter saturation voltage V (V) ( ) T CE(sat) Total power dissipation P mW T Collector current I (mA) Collector current I (mA) C C Collector output capacitance C (pF) Forward current transfer ratio h ob FE (Common base, input open circuited)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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