Product Information

CRSS042N10N

Product Image X-ON

Datasheet
MOSFET N Trench 100V 120A (Tc) 4V @ 250uA 4.2 mΩ @ 50A,10V T0-263 RoHS
Manufacturer: CRMICRO



Price (USD)

1: USD 1.2091 ea
Line Total: USD 1.2091

598 - Global Stock
Ships to you between
Fri. 07 Apr to Wed. 12 Apr
MOQ: 1 Multiples:1
Pack Size :   1
Availability Price Quantity
478 - Global Stock


Ships to you between
Fri. 07 Apr to Wed. 12 Apr

MOQ : 1
Multiples : 1

Stock Image

CRSS042N10N
CRMICRO

1 : USD 1.2091
10 : USD 0.9928
30 : USD 0.8859
100 : USD 0.7765
500 : USD 0.7128
1000 : USD 0.6584

     
Manufacturer
CRMICRO
Product Category
MOSFET
Category
MOSFET
Rohs
y
Package
T0 - 263
Brand Category
CRMICRO
Fet Type
n channel
Drain To Source Voltagevdss
100 V
Continuous Drain Current Id @ 25°C
120 A (t C)
Vgsth Max @ Id
4v @ 250ua
Rds On Max @ Id Vgs
4.2 m @ 50a,10v
Power Dissipation-Max Ta
227 W
Drain Source Voltage Vdss
100 V
Continuous Drain Current Id
120 A
Power Dissipation Pd
227 W
Drain Source On Resistance Rdson@Vgs Id
4.2 mOhms @10V , 50A
Gate Threshold Voltage Vgsth@Id
4 V @250uA
Type
N Channel
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CRST045N10N, CRSS042N10N ( ) SkyMOS1 N-MOSFET 100V, 3.6m, 120A Features Product Summary V 100V Uses CRM(CQ) advanced SkyMOS1 technology DS Extremely low on-resistance R R 3.6m DS(on) DS(on) I Excellent Q xR product(FOM) 120A g DS(on) D Qualified according to JEDEC criteria Applications Motor control and drive 111000000%%% AAAvvvaaalllaaannnccchhheee TTTeeesssttteeeddd Battery management UPS (Uninterrupible Power Supplies) CRST045N10N CRSS042N10N Package Marking and Ordering Information Part Marking Package Packing Reel Size Tape Width Qty CRST045N10N - TO-220 Tube N/A N/A 50pcs CRSS042N10N - TO-263 Tube N/A N/A 50pcs Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source voltage V 100 V DS Continuous drain current T = 25C (Silicon limit) 172 C I A D T = 25C (Package limit) 120 C T = 100C (Silicon limit) 109 C Pulsed drain current (T = 25C, t limited by T ) I 480 A C p jmax D pulse E Avalanche energy, single pulse (L=0.5mH, Rg=25) 256 mJ AS Gate-Source voltage V 20 V GS Power dissipation (T = 25C) P 227 W C tot OOppeerraattiinngg jjuunnccttiioonn aanndd ssttoorraaggee tteemmppeerraattuurree TT ,, TT --5555......++115500 CC jj ssttgg China Resources Microelectronics (Chongqing) Limited Page 1CRST045N10N, CRSS042N10N ( ) SkyMOS1 N-MOSFET 100V, 3.6m, 120A Thermal Resistance Parameter Symbol Max Unit Thermal resistance, junction case. R 0.55 thJC C/W Thermal resistance, junction ambient(min. footprint) R 62 thJA Electrical Characteristic (at Tj = 25 C, unless otherwise specified) Value Symbol Parameter Unit Test Condition min. typ. max. Static Characteristic Drain-source breakdown BV 100 115 - V V =0V, I =250uA DSS GS D voltage Gate threshold voltage V 2 3 4 V V =V ,I =250uA GS(th ) DS GS D V =100V,V =0V DS GS Zero gate voltage drain I T =25C - 0.05 1 A DSS j current TT ==112255CC -- -- 1100 jj Gate-source leakage I V =20V,V =0V - 10 100 nA GSS GS DS current V =10V, I =50A GS D Drain-source on-state R - 3.6 4.5 TO-220 DS(on) resistance m - 3.4 4.2 TO-263 g V =5V,I =50A Transconductance - 50 - S fs DS D Dynamic Characteristic Input Capacitance C - 6772 - iss V =0V, V =50V, C Output Capacitance - 952 - GS DS oss pF f=1MHz Reverse Transfer C - 33 - rss Capacitance Gate Total Charge Q - 90 - G V =10V, V =50V, GS DS Gate-Source charge Q - 28 - nC gs I =20A, f=1MHz D Gate-Drain charge Q - 19 - gd Turn-on delay time t - 28 - d(on) t Rise time - 32 - r V =10V, V =50V, GS DD ns R =3.0 G ext t Turn-off delay time - 48 - d(off) t Fall time - 27 - f VV ==00VV,, VV ==00VV,, GGSS DDSS GGaattee rreessiissttaannccee RR -- 22 -- GG f=1MHz China Resources Microelectronics (Chongqing) Limited Page 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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