CRST055N08N, CRSS052N08N ( ) SkyMOS1 N-MOSFET 85V, 4.6m, 120A Features Product Summary V 85V Uses CRM(CQ) advanced SkyMOS1 technology DS Extremely low on-resistance R R 4.6m DS(on) DS(on) I Excellent Q xR product(FOM) 120A g DS(on) D Qualified according to JEDEC criteria Applications Motor control and drive 111000000%%% AAAvvvaaalllaaannnccchhheee TTTeeesssttteeeddd Battery management UPS (Uninterrupible Power Supplies) CRST055N08N CRSS052N08N Package Marking and Ordering Information Part Marking Package Packing Reel Size Tape Width Qty CRST055N08N - TO-220 Tube N/A N/A 50pcs CRSS052N08N - TO-263 Tube N/A N/A 50pcs Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source voltage V 85 V DS Continuous drain current T = 25C (Silicon limit) 135 C I A D T = 25C (Package limit) 120 C T = 100C (Silicon limit) 86 C Pulsed drain current (T = 25C, t limited by T ) I 480 A C p jmax D pulse E Avalanche energy, single pulse (L=0.5mH, Rg=25) 144 mJ AS Gate-Source voltage V 20 V GS Power dissipation (T = 25C) P 174 W C tot OOppeerraattiinngg jjuunnccttiioonn aanndd ssttoorraaggee tteemmppeerraattuurree TT ,, TT --5555......++115500 CC jj ssttgg China Resources Microelectronics (Chongqing) Limited Page 1CRST055N08N, CRSS052N08N ( ) SkyMOS1 N-MOSFET 85V, 4.6m, 120A Thermal Resistance Parameter Symbol Max Unit Thermal resistance, junction case. R 0.72 thJC C/W Thermal resistance, junction ambient(min. footprint) R 62 thJA Electrical Characteristic (at Tj = 25 C, unless otherwise specified) Value Symbol Parameter Unit Test Condition min. typ. max. Static Characteristic Drain-source breakdown BV 85 97 - V V =0V, I =250uA DSS GS D voltage Gate threshold voltage V 2 3 4 V V =V ,I =250uA GS(th ) DS GS D V =80V,V =0V DS GS Zero gate voltage drain I T =25C - 0.05 1 A DSS j current TT ==112255CC -- -- 55 jj Gate-source leakage I V =20V,V =0V - 10 100 nA GSS GS DS current V =10V, I =50A GS D Drain-source on-state R - 4.6 5.5 TO-220 DS(on) resistance m - 4.3 5.2 TO-263 g V =5V,I =50A Transconductance - 84.2 - S fs DS D Dynamic Characteristic Input Capacitance C - 3086 - iss V =0V, V =40V, C Output Capacitance - 1057 - GS DS oss pF f=1MHz Reverse Transfer C - 26 - rss Capacitance Gate Total Charge Q - 55 - G V =10V, V =40V, GS DS Gate-Source charge Q - 15 - nC gs I =50A, f=1MHz D Gate-Drain charge Q - 13 - gd Turn-on delay time t - 20.1 - d(on) t Rise time - 38.9 - r V =10V, V =40V, GS DD ns R =3.0 G ext t Turn-off delay time - 45.1 - d(off) t Fall time - 22.8 - f VV ==00VV,, VV ==00VV,, GGSS DDSS GGaattee rreessiissttaannccee RR -- 33..33 -- GG f=1MHz China Resources Microelectronics (Chongqing) Limited Page 2