CRTD105N06L ( ) Trench N-MOSFET 60V, 8.5m, 64A Features Product Summary V Uses CRM(CQ) advanced Trench MOS technology 60V DS Extremely low on-resistance R R 8.5m DS(on) DS(on) typ. I Excellent Q xR product(FOM) 64A D g DS(on) Qualified according to JEDEC criteria 111000000%%% DDDVVVDDDSSS TTTeeesssttteeeddd Applications 111000000%%% AAAvvvaaalllaaannnccchhheee TTTeeesssttteeeddd Motor control and drive Battery management UPS (Uninterrupible Power Supplies) Package Marking and Ordering Information Part Marking Package Packing Reel Size Tape Width Qty CRTD105N06L CRTD105N06L TO-252 Reel N/A N/A 2500 Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source voltage V 60 V DS Continuous drain current T = 25C (Silicon limit) 64 C I A D T = 25C (Package limit) 80 C T = 100C (Silicon limit) 41 C Pulsed drain current (T = 25C, t limited by T ) I 256 A C p jmax D pulse E Avalanche energy, single pulse (L=0.5mH, Rg=25 ) 60 mJ AS V Gate-Source voltage 20 V GS Power dissipation (T = 25C) P 88 W C tot Operating junction and storage temperature T , T -55...+150 C j stg SSoollddeerriinngg tteemmppeerraattuurree,, wwaavvee ssoollddeerriinngg oonnllyy aalllloowweedd aatt lleeaaddss TT 260 C sold (1.6mm from case for 10s) China Resources Microelectronics (Chongqing) Limited Page 1 CRTD105N06L ( ) Trench N-MOSFET 60V, 8.5m, 64A Thermal Resistance Parameter Symbol Max Unit Thermal resistance, junction case. R 1.42 thJC C/W R * Thermal resistance, junction ambient(min. footprint) 105 thJA Electrical Characteristic (at Tj = 25 C, unless otherwise specified) Value Symbol Parameter Unit Test Condition min. typ. max. Static Characteristic Drain-source breakdown BV V =0V, I =250uA 60 - - V DSS GS D voltage Gate threshold voltage V 1.3 1.8 2.3 V V =V ,I =250uA GS(th ) DS GS D V =60V,V =0V DS GS Zero gate voltage drain I - 0.02 1 A T =25C DSS j current T =150C - - 100 j GGaattee--ssoouurrccee lleeaakkaaggee II -- 1100 110000 nnAA VV ==2200VV,,VV ==00VV GGSSSS GGSS DDSS current V =10V, I =30A, GS D T =25C - 8.5 10.5 j Drain-source on-state R m DS(on) resistance T =150C - 16.7 20.5 j - 10.5 12.5 V =4.5V, I =25A, GS D g V =5V,I =30A Transconductance - 65 - S fs DS D Dynamic Characteristic Input Capacitance C - 1940 - iss V =0V, V =30V, C GS DS Output Capacitance - 197 - oss pF f=1MHz Reverse Transfer C - 142 - rss Capacitance Q Gate Total Charge - 45 - G V =10V, V =30V, GS DS Gate-Source charge Q - 9 - nC gs I =30A, f=1MHz D Q Gate-Drain charge - 13 - gd Turn-on delay time t - 10 - d(on) t Rise time - 50 - r V =10V, V =30V, GS DD ns R =2.7, I =30A G ext D t Turn-off delay time - 30 - d(off) Fall time t - 72 - f V =0V, V =0V, GS DS Gate resistance R - 1.2 - G ff==11MMHHzz China Resources Microelectronics (Chongqing) Limited Page 2