Product Information

CRTD105N06L

Product Image X-ON

Datasheet
MOSFET N Channel 60V 64A(Tc) 2.3V @ 250uA 10.5mO @ 30A,10V TO-252 RoHS
Manufacturer: CRMICRO



Price (USD)

5: USD 0.4565 ea
Line Total: USD 2.2825

3627 - Global Stock
Ships to you between
Fri. 14 Apr to Wed. 19 Apr
MOQ: 5 Multiples:5
Pack Size :   5
Availability Price Quantity
2552 - Global Stock


Ships to you between
Fri. 14 Apr to Wed. 19 Apr

MOQ : 5
Multiples : 5

Stock Image

CRTD105N06L
CRMICRO

5 : USD 0.4565
50 : USD 0.3656
150 : USD 0.3267
500 : USD 0.2726
2500 : USD 0.2432
5000 : USD 0.2306

     
Manufacturer
CRMICRO
Product Category
MOSFET
Category
MOSFET
Rohs
y
Package
TO - 252
Brand Category
Crmicro
Fet Type
NChannel
Drain To Source Voltagevdss
60 V
Continuous Drain Current Id @ 25°C
64 A (T C)
Vgsth Max @ Id
2.3V @ 250uA
Rds On Max @ Id Vgs
10.5mO @ 30A,10V
Power Dissipation-Max Ta 25°C
88 W (Tc)
Drain Source Voltage Vdss
60 V
Continuous Drain Current Id
64 A
Power Dissipation Pd
88 W
Drain Source On Resistance Rdson@Vgs Id
10.5 mOhms @10V , 30A
Gate Threshold Voltage Vgsth@Id
2.3 V @250uA
Type
N Channel
Show Stocked Products With Similar Attributes. LoadingGif
Image Description
Stock Image CRTD110N03L
MOSFET N Trench 30V 20A (Tc) 1.8V @ 250uA 11 mΩ @ 12A,10V TO-252 RoHS
Stock : 1
Stock Image CRTT056N06N
MOSFET N Channel 60V 110A(Tc) 3.6V @ 250uA 5.6mO @ 40A,10V TO-220 RoHS
Stock : 987
Stock Image SKD502T
MOSFET N Channel 85V 120A(Tc) 4V @ 250uA 5.5mO @ 50A,10V TO-220 RoHS
Stock : 0
Stock Image SKD503T
MOSFET N Channel 100V 120A(Tc) 4V @ 250uA 4.5mO @ 50A,10V TO-220 RoHS
Stock : 0
Stock Image CRTM025N03L
MOSFET N Channel 30V 98A(Tc) 2.3V @ 250uA 2.5mO @ 50A,10V DFN5x6 RoHS
Stock : 12167
Stock Image CRTS030N04L
MOSFET N Channel 40V 80A(Tc) 2.7V @ 250uA 3.3mO @ 50A,10V TO-263 RoHS
Stock : 13
Stock Image CRTT084NE6N
MOSFET N Channel 68V 81A(Tc) 4V @ 250uA 8.4mO @ 40A,10V TO-220 RoHS
Stock : 2913
Stock Image CRTM030N04L
MOSFET DFN5x6 RoHS
Stock : 10554
Stock Image CRTT095N12N
MOSFET TO-220 RoHS
Stock : 1000
Stock Image CRTS260N10N
MOSFET TO-263 RoHS
Stock : 569
Image Description
Stock Image STS9P3LLH6

MOSFET LGS LV MOSFET
Stock : 0

Stock Image CRTD030N04L

MOSFET N Channel 40V 80A(Tc) 3V @ 250uA 3.3mO @ 40A,10V TO-252 RoHS
Stock : 1362

Stock Image TSM110NB04LCR RLG

MOSFET 40V 54A Single N-Chan Pwr MOSFET
Stock : 9775

Stock Image SM6442D1RL

MOSFET DFN5*6 RoHS
Stock : 10

Stock Image SM6512D1RL

MOSFET DFN5*6 RoHS
Stock : 10963

Stock Image SM6358D1RL

MOSFET DFN5*6 RoHS
Stock : 3000

Stock Image SM6796D1RL

MOSFET DFN5*6 RoHS
Stock : 2415

Stock Image SM6366ED1RL

MOSFET DFN5*6 RoHS
Stock : 7

Stock Image SM6426D1RL

MOSFET DFN5*6 RoHS
Stock : 2473

Stock Image SM6362D1RL

MOSFET DFN5*6 RoHS
Stock : 4854

CRTD105N06L ( ) Trench N-MOSFET 60V, 8.5m, 64A Features Product Summary V Uses CRM(CQ) advanced Trench MOS technology 60V DS Extremely low on-resistance R R 8.5m DS(on) DS(on) typ. I Excellent Q xR product(FOM) 64A D g DS(on) Qualified according to JEDEC criteria 111000000%%% DDDVVVDDDSSS TTTeeesssttteeeddd Applications 111000000%%% AAAvvvaaalllaaannnccchhheee TTTeeesssttteeeddd Motor control and drive Battery management UPS (Uninterrupible Power Supplies) Package Marking and Ordering Information Part Marking Package Packing Reel Size Tape Width Qty CRTD105N06L CRTD105N06L TO-252 Reel N/A N/A 2500 Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source voltage V 60 V DS Continuous drain current T = 25C (Silicon limit) 64 C I A D T = 25C (Package limit) 80 C T = 100C (Silicon limit) 41 C Pulsed drain current (T = 25C, t limited by T ) I 256 A C p jmax D pulse E Avalanche energy, single pulse (L=0.5mH, Rg=25 ) 60 mJ AS V Gate-Source voltage 20 V GS Power dissipation (T = 25C) P 88 W C tot Operating junction and storage temperature T , T -55...+150 C j stg SSoollddeerriinngg tteemmppeerraattuurree,, wwaavvee ssoollddeerriinngg oonnllyy aalllloowweedd aatt lleeaaddss TT 260 C sold (1.6mm from case for 10s) China Resources Microelectronics (Chongqing) Limited Page 1 CRTD105N06L ( ) Trench N-MOSFET 60V, 8.5m, 64A Thermal Resistance Parameter Symbol Max Unit Thermal resistance, junction case. R 1.42 thJC C/W R * Thermal resistance, junction ambient(min. footprint) 105 thJA Electrical Characteristic (at Tj = 25 C, unless otherwise specified) Value Symbol Parameter Unit Test Condition min. typ. max. Static Characteristic Drain-source breakdown BV V =0V, I =250uA 60 - - V DSS GS D voltage Gate threshold voltage V 1.3 1.8 2.3 V V =V ,I =250uA GS(th ) DS GS D V =60V,V =0V DS GS Zero gate voltage drain I - 0.02 1 A T =25C DSS j current T =150C - - 100 j GGaattee--ssoouurrccee lleeaakkaaggee II -- 1100 110000 nnAA VV ==2200VV,,VV ==00VV GGSSSS GGSS DDSS current V =10V, I =30A, GS D T =25C - 8.5 10.5 j Drain-source on-state R m DS(on) resistance T =150C - 16.7 20.5 j - 10.5 12.5 V =4.5V, I =25A, GS D g V =5V,I =30A Transconductance - 65 - S fs DS D Dynamic Characteristic Input Capacitance C - 1940 - iss V =0V, V =30V, C GS DS Output Capacitance - 197 - oss pF f=1MHz Reverse Transfer C - 142 - rss Capacitance Q Gate Total Charge - 45 - G V =10V, V =30V, GS DS Gate-Source charge Q - 9 - nC gs I =30A, f=1MHz D Q Gate-Drain charge - 13 - gd Turn-on delay time t - 10 - d(on) t Rise time - 50 - r V =10V, V =30V, GS DD ns R =2.7, I =30A G ext D t Turn-off delay time - 30 - d(off) Fall time t - 72 - f V =0V, V =0V, GS DS Gate resistance R - 1.2 - G ff==11MMHHzz China Resources Microelectronics (Chongqing) Limited Page 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,