CRTM025N03L VDSS 30V Features RDS(on) Vgs=10V typ. 2.0m Lead free and Green Device Available max. 2.5m Low Rds-on to Minimize Conductive Loss RDS(on) Vgs=4.5V typ. 2.6m High avalanche Current max. 3.3m ID Vgs=10V (Silicon limited) 98A Application Load Switch SPMS Absolute Maximum Ratings (T =25C unless otherwise noted) A Symbol Param Maximum Unit V Drain-to-Source Voltage eter 30 V DSS V Gate-to-Source Voltage 20 V GSS T =25C 98 c I Vgs=10V D T =100C 62 c A Continuous Drain Current 85 T =25C c I Vgs=4.5V D 54 T =100C c I Pulsed Drain Current T =25C A - DP a IAS Avalanche Current (L=0.3mH) A 28 T =25C EAS Avalanche Energy (L=0.3mH) 117 mJ T =25C T =25C 2.5 a W PD Maximum Power Dissipation T =100C 1 a T T Junction & Storage Temperature Range -55~150 C J, STG Thermal Characteristics Symbol Parameter Max. Unit Thermal resistance, junction to case 3.2 /W RthJC RthJA Thermal resistance, junction to ambient 50 /W China Resources Microelectronics 1 Feb, 2018 CRTM025N03L Electrical Characteristics (TA=25C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ Max. Unit Static Characteristics BV DSS Drain-Source Breakdown V =0V,I =250uA 30 V GS D Voltage Zero Gate Voltage Drain uA V =30V,V =0V 1 DS GS I DSS Current V V GS(th) Gate Threshold Voltage V =VGS,I =250uA 1.3 2.3 DS D I nA GSS Gate Leakage Current V =20V, V =0V 100 GS DS m V =10V, I =50A 2.0 2.5 GS D R DS(on) Drain-Source On-Resistance V =4.5V, I =40A 2.6 3.3 GS D Gfs Forward Transconductance VDS=5V, ID=70A 153 S Diode Characteristics V Diode Forward Voltage I =70A,V =0V 0.9 1.3 V SD SD GS IS Diode Continuous Forward 24 A Current t Reverse Recovery Time IS=50A, 27 nS rr di/dt=100A/us Q Reverse Recovery Charge 16 nC rr Dynamic Characteristics R Gate Resistance V =0V, V =0V, G GS DS 2.5 Frequency=1MHz C Input Capacitance 6120 iss VGS=0V, C Output Capacitance 704 oss VDS=15V, pF C Reverse Transfer 638 F=1MHz rss Capacitance t Turn-On Delay Time 51 d(on) VDS=15V, t Rise Time 107 r ID=20A, nS t Turn-Off Delay Time Rg=3 , 95 d(off) VGS=4.5V t Fall Time 73 f Gate Charge Characteristics Q Total Gate Charge 52 g VDS=15V Q Gate-to-Source Charge 16 gs VGS=4.5V nC ID=50A Q Gate-to-Drain Charge 23 gd China Resources Microelectronics 2 Feb, 2018