Product Information

CRTM025N03L

Product Image X-ON

Datasheet
MOSFET N Channel 30V 98A(Tc) 2.3V @ 250uA 2.5mO @ 50A,10V DFN5x6 RoHS
Manufacturer: CRMICRO



Price (USD)

1: USD 0.5635 ea
Line Total: USD 0.5635

12167 - Global Stock
Ships to you between
Tue. 11 Apr to Fri. 14 Apr
MOQ: 1 Multiples:1
Pack Size :   1
Availability Price Quantity
1821 - Global Stock


Ships to you between
Tue. 11 Apr to Fri. 14 Apr

MOQ : 1
Multiples : 1

Stock Image

CRTM025N03L
CRMICRO

1 : USD 0.545
10 : USD 0.4434
30 : USD 0.3998
100 : USD 0.3456
500 : USD 0.2952
1000 : USD 0.2807

     
Manufacturer
CRMICRO
Product Category
MOSFET
Category
MOSFET
Rohs
y
Package
DFN5X6
Brand Category
Crmicro
Fet Type
NChannel
Drain To Source Voltagevdss
30 V
Continuous Drain Current Id @ 25°C
98 A (T C)
Vgsth Max @ Id
2.3V @ 250uA
Rds On Max @ Id Vgs
2.5mO @ 50A,10V
Power Dissipation-Max Ta 25°C
2.5 W
Drain Source Voltage Vdss
30 V
Continuous Drain Current Id
98 A
Drain Source On Resistance Rdson@Vgs Id
2.5 mOhms @10V , 50A
Power Dissipation Pd
2.5 W
Gate Threshold Voltage Vgsth@Id
2.3 V @250uA
Type
N Channel
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CRTM025N03L VDSS 30V Features RDS(on) Vgs=10V typ. 2.0m Lead free and Green Device Available max. 2.5m Low Rds-on to Minimize Conductive Loss RDS(on) Vgs=4.5V typ. 2.6m High avalanche Current max. 3.3m ID Vgs=10V (Silicon limited) 98A Application Load Switch SPMS Absolute Maximum Ratings (T =25C unless otherwise noted) A Symbol Param Maximum Unit V Drain-to-Source Voltage eter 30 V DSS V Gate-to-Source Voltage 20 V GSS T =25C 98 c I Vgs=10V D T =100C 62 c A Continuous Drain Current 85 T =25C c I Vgs=4.5V D 54 T =100C c I Pulsed Drain Current T =25C A - DP a IAS Avalanche Current (L=0.3mH) A 28 T =25C EAS Avalanche Energy (L=0.3mH) 117 mJ T =25C T =25C 2.5 a W PD Maximum Power Dissipation T =100C 1 a T T Junction & Storage Temperature Range -55~150 C J, STG Thermal Characteristics Symbol Parameter Max. Unit Thermal resistance, junction to case 3.2 /W RthJC RthJA Thermal resistance, junction to ambient 50 /W China Resources Microelectronics 1 Feb, 2018 CRTM025N03L Electrical Characteristics (TA=25C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ Max. Unit Static Characteristics BV DSS Drain-Source Breakdown V =0V,I =250uA 30 V GS D Voltage Zero Gate Voltage Drain uA V =30V,V =0V 1 DS GS I DSS Current V V GS(th) Gate Threshold Voltage V =VGS,I =250uA 1.3 2.3 DS D I nA GSS Gate Leakage Current V =20V, V =0V 100 GS DS m V =10V, I =50A 2.0 2.5 GS D R DS(on) Drain-Source On-Resistance V =4.5V, I =40A 2.6 3.3 GS D Gfs Forward Transconductance VDS=5V, ID=70A 153 S Diode Characteristics V Diode Forward Voltage I =70A,V =0V 0.9 1.3 V SD SD GS IS Diode Continuous Forward 24 A Current t Reverse Recovery Time IS=50A, 27 nS rr di/dt=100A/us Q Reverse Recovery Charge 16 nC rr Dynamic Characteristics R Gate Resistance V =0V, V =0V, G GS DS 2.5 Frequency=1MHz C Input Capacitance 6120 iss VGS=0V, C Output Capacitance 704 oss VDS=15V, pF C Reverse Transfer 638 F=1MHz rss Capacitance t Turn-On Delay Time 51 d(on) VDS=15V, t Rise Time 107 r ID=20A, nS t Turn-Off Delay Time Rg=3 , 95 d(off) VGS=4.5V t Fall Time 73 f Gate Charge Characteristics Q Total Gate Charge 52 g VDS=15V Q Gate-to-Source Charge 16 gs VGS=4.5V nC ID=50A Q Gate-to-Drain Charge 23 gd China Resources Microelectronics 2 Feb, 2018

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,