X-On Electronics has gained recognition as a prominent supplier of 2DA1213Y-13 bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. 2DA1213Y-13 bipolar transistors - bjt are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

2DA1213Y-13 Diodes Incorporated

2DA1213Y-13 electronic component of Diodes Incorporated
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See Product Specifications
Part No.2DA1213Y-13
Manufacturer: Diodes Incorporated
Category:Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 1W -50V
Datasheet: 2DA1213Y-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.552 ea
Line Total: USD 0.55

Availability - 4264
Ships to you between
Thu. 13 Jun to Mon. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
926 - WHS 1


Ships to you between
Fri. 14 Jun to Wed. 19 Jun

MOQ : 5
Multiples : 5
5 : USD 0.2395
50 : USD 0.1932
150 : USD 0.1734
500 : USD 0.1484
2500 : USD 0.1374
5000 : USD 0.1308

4264 - WHS 2


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 0.552
10 : USD 0.4313
100 : USD 0.2346
1000 : USD 0.1633
2500 : USD 0.1438
10000 : USD 0.1357

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 2DA1213Y-13 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2DA1213Y-13 and other electronic components in the Bipolar Transistors - BJT category and beyond.

2DA1213O/Y 50V PNP POWER SWITCHING TRANSISTOR IN SOT89 Features Mechanical Data BV > -50V Case: SOT89 CEO I = -2A high Continuous Collector Current Case material: Molded Plastic. Green Molding Compound. C High Gain Holds up UL Flammability Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Moisture Sensitivity: Level 1 per J-STD-020 Halogen and Antimony Free. Green Device (Note 3) Terminals: Finish - Matte Tin Plated Leads, Solderable per Qualified to AEC-Q101 Standards for High Reliability MIL-STD-202, Method 208 Weight: 0.052 grams (Approximate) SOT89 C E C C B B E Top View Top View Device Symbol Pin Out Ordering Information (Notes 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel 2DA1213O-13 P25X 13 12 2,500 2DA1213Y-13 P25Y 13 12 2,500 2DA1213Y-13R P25Y 13 12 4,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See 2DA1213O/Y Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -50 V CEO Emitter-Base Voltage -6 V V EBO Continuous Collector Current -2 A I C Peak Pulse Current -2.5 A I CM Base Current I -500 mA B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) 1 W P D Thermal Resistance, Junction to Ambient (Note 5) 125 R C/W JA Thermal Resistance, Junction to Leads (Note 6) 18.3 R C/W JL Operating and Storage Temperature Range -55 to +150 T T C J, STG Notes: 5. For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions the device is measured when operating in steady state condition. 6. Thermal resistance from junction to solder-point (on the exposed collector pad). Thermal Characteristics and Derating Information 120 1.0 100 0.8 80 D=0.5 0.6 60 0.4 40 Single Pulse D=0.2 0.2 D=0.05 20 D=0.1 0.0 0 0 25 50 75 100 125 150 100 1m 10m 100m 1 10 100 1k Temperature (C) Pulse Width (s) Transient Thermal Impedance Derating Curve 100 Single Pulse. T =25C amb 10 1 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation 2 of 6 February 2013 2DA1213O/Y Diodes Incorporated www.diodes.com Document number: DS31306 Rev: 5 - 2 Max Power Dissipation (W) Max Power Dissipation (W) Thermal Resistance (C/W)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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