AC857BSQ 45V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent Case: SOT363 requirement of Automotive Applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Terminals: Finish Matte Tin Finish. Solderable per MIL-STD- e3 202, Method 208 Ultra-Small Surface Mount Package Weight: 0.006 grams (Approximate) Ideally Suited for Automated Insertion For Switching and AF Amplifier Application Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.Gree Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT363 C1 C2 B2 B1 SOT363 E1 E2 Top View Device Symbol Top View Pin-Out Ordering Information (Notes 4 & 5) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel AC857BSQ-7 Automotive 2C8 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See AC857BSQ Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -45 V CEO Emitter-Base Voltage V -5.0 V EBO Collector Current -100 mA I C Peak Collector Current -200 mA I CM Peak Base Current -200 mA I BM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) 200 mW P D Thermal Resistance, Junction to Ambient Air (Note 6) R 625 C/W JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( TA = +25C unless otherwise specified.) Characteristic (Note 7) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage B V -50 V I = -100A, I = 0 CBO C B Collector-Emitter Breakdown Voltage B V -45 V I = -10mA, I = 0 CEO C B Emitter-Base Breakdown Voltage -5 V BV I = -100A, I = 0 EBO E C DC Current Gain 220 475 h V = -5.0V, I = -2.0mA FE CE C -100 I = -10mA, I = -0.5mA C B Collector-Emitter Saturation Voltage V mV CE(SAT) -400 I = -100mA, I = -5.0mA C B Base-Emitter Saturation Voltage V -700 mV I = -10mA, I = -0.5mA BE(SAT) C B Base-Emitter Voltage V -580 -665 -750 mV V = -5.0V, I = -2.0mA BE(ON) CE C V = -30V -15 nA CB Collector-Cutoff Current I CBO -4.0 A V = -30V, T = +150C CB A Emitter Cutoff Current -100 nA I V = -5.0V, I = 0 EBO EB C V = -5.0V, I = -10mA, CE C Gain Bandwidth Product 100 MHz f T f = 100MHz Collector-Base Capacitance C 2 3 pF V = -10V, f = 1.0MHz CBO CB Emitter-Base Capacitance C 11 pF V = -0.5V, f = 1.0MHz EBO EB Notes: 6. For the device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. Short duration pulse test used to minimize self-heating effect. 2 of 5 February 2017 AC857BSQ Diodes Incorporated www.diodes.com Document number: DS39495 Rev. 1 - 2