AMBTA92Q 300V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT23 stringent requirements of Automotive Applications. Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish-Matte Tin Plated Leads Solderable per MIL- Features STD-202, Method 208 Weight: 0.008 grams (Approximate) BV > -300V CEO Ideal for Medium Power Amplification and Switching Complementary NPN Type: MMBTA42Q Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT23 C E B C B E Top View Top View Device Symbol Pin-Out Symbolhematic Symbolhematic Ordering Information (Notes 4 & 5) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel AMBTA92Q-7 Automotive 2G2 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See AMBTA92Q Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -300 V CBO Collector-Emitter Voltage V -300 V CEO Emitter-Base Voltage V -5.0 V EBO Collector Current I -500 mA C Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) 300 mW P D Thermal Resistance, Junction to Ambient (Note 6) 417 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. Typical Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Collector-Base Breakdown Voltage -300 V BV I = -100A CBO C Collector-Emitter Breakdown Voltage -300 V BV I = -1.0mA CEO C Emitter-Base Breakdown Voltage BV -5.0 V I = -100A EBO E Collector Cut-Off Current I -250 nA V = -200V CBO CB Emitter Cut-Off Current I -100 nA V = -3.0V EBO EB ON CHARACTERISTICS (Note 8) 25 I = -1.0mA, V = -10V C CE DC Current Gain 40 h I = -10mA, V = -10V FE C CE 25 I = -30mA, V = -10V C CE Collector-Emitter Saturation Voltage V -0.5 V I = -20mA, I = -2.0mA CE(SAT) C B Base-Emitter Saturation Voltage V -0.9 V I = -20mA, I = -2.0mA BE(SAT) C B SMALL SIGNAL CHARACTERISTICS Output Capacitance 6.0 pF C V = -20V, f = 1.0MHz, I = 0 obo CB E V = -20V, I = -10mA, CE C Current Gain-Bandwidth Product f 50 MHz T f = 100MHz Note: 8. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. 2 of 5 AMBTA92Q May 2018 Diodes Incorporated www.diodes.com Document number: DS40184 Rev. 1 - 2