X-On Electronics has gained recognition as a prominent supplier of BC846BLP4-7B Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC846BLP4-7B Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC846BLP4-7B Diodes Incorporated

BC846BLP4-7B electronic component of Diodes Incorporated
BC846BLP4-7B Diodes Incorporated
BC846BLP4-7B Bipolar Transistors - BJT
BC846BLP4-7B  Semiconductors

Images are for reference only
See Product Specifications
Part No. BC846BLP4-7B
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT 65V NPN Small Sig 80V 65V 100mA
Datasheet: BC846BLP4-7B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2638 ea
Line Total: USD 0.26 
Availability - 108996
Ship by Fri. 20 Jun to Tue. 24 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
108996
Ship by Fri. 20 Jun to Tue. 24 Jun
MOQ : 1
Multiples : 1
1 : USD 0.2638
10 : USD 0.1613
100 : USD 0.0852
500 : USD 0.0655
1000 : USD 0.0528
2500 : USD 0.0495
5000 : USD 0.0429
10000 : USD 0.0352
20000 : USD 0.0341

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC846BLP4-7B from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC846BLP4-7B and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC846BLP4 65V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Case: X2-DFN1006-3 Low Collector-Emitter Saturation Voltage, V CE(sat) Case Material: Molded Plastic,Gree Molding Compound. Ultra-Small Leadless Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) Moisture Sensitivity: Level 1 per J-STD-020 Halogen and Antimony Free. Green Device (Note 3) Terminals: Finish NiPdAu over Copper leadframe. Solderable Qualified to AEC-Q101 Standards for High Reliability e4 per MIL-STD-202, Method 208 Weight: 0.0009 grams (Approximate) X2-DFN1006-3 C B B C E E Top View Bottom View Device Symbol Device Schematic Ordering Information (Note 4) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel BC846BLP4-7B 3S 7 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BC846BLP4 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 80 V V CBO Collector-Emitter Voltage 65 V V CEO Emitter-Base Voltage 6 V V EBO Collector Current - Continuous 100 mA I C Peak Collector Current I 200 mA CM Peak Emitter Current I 200 mA EM Thermal Characteristics Characteristic Symbol Value Unit (Note 5) 0.46 Power Dissipation P W D (Note 6) 1 (Note 5) 272 Thermal Resistance, Junction to Ambient R C/W JA (Note 6) 120 Thermal Resistance, Junction to Leads (Note 7) R 110 C/W JL Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink. 6. Same as note 5, except device is surface mounted on 25mm X 25mm collector pad heatsink with 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 July 2012 BC846BLP4 Diodes Incorporated www.diodes.com Document number: DS35751 Rev. 2 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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