X-On Electronics has gained recognition as a prominent supplier of BSS8402DWQ-7 mosfet across the USA, India, Europe, Australia, and various other global locations. BSS8402DWQ-7 mosfet are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

BSS8402DWQ-7 Diodes Incorporated

BSS8402DWQ-7 electronic component of Diodes Incorporated
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Part No.BSS8402DWQ-7
Manufacturer: Diodes Incorporated
Category:MOSFET
Description: Trans MOSFET N/P-CH 60V/50V 0.115A/0.13A Automotive 6-Pin SOT-363 T/R
Datasheet: BSS8402DWQ-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2733 ea
Line Total: USD 1.37

Availability - 2507
Ships to you between
Mon. 10 Jun to Thu. 13 Jun
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2483 - WHS 1


Ships to you between
Mon. 10 Jun to Thu. 13 Jun

MOQ : 5
Multiples : 5
5 : USD 0.2649
50 : USD 0.2294
150 : USD 0.2142
500 : USD 0.1952
3000 : USD 0.1868
6000 : USD 0.1817

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Brand
Package Type
Pin Count
Operating Temperature Classification
Operating Temp Range
Type
Rad Hardened
Gate-Source Voltage Max
Number Of Elements
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We are delighted to provide the BSS8402DWQ-7 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS8402DWQ-7 and other electronic components in the MOSFET category and beyond.

BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D Device BV R DSS DS(ON) Max Low Gate Threshold Voltage T = +25C A Q1 60V 115mA Low Input Capacitance 13.5 V = 10V GS Fast Switching Speed Q2 -50V 10 V = -5V -130mA GS Low Input/Output Leakage Complementary Pair Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This MOSFET has been designed to minimize the on-state resistance Halogen and Antimony Free. Green Device (Note 3) (R ) and yet maintain superior switching performance, making it Qualified to AEC-Q101 Standards for High Reliability DS(ON) ideal for high efficiency power management applications. PPAP Capable (Note 4) Applications Mechanical Data General Purpose Interfacing Switch Case: SOT363 Power Management Functions Case Material: Molded Plastic. Green Molding Compound. UL Analog Switch Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) SOT363 D G S 1 2 2 Q Q 1 2 S G D 1 1 2 Top View Top View Internal Schematic Ordering Information (Note 5) Part Number Compliance Case Packaging BSS8402DW-7-F Standard SOT363 3,000/Tape & Reel BSS8402DW-13-F Standard SOT363 10,000/Tape & Reel BSS8402DWQ-7 Automotive SOT363 3,000/Tape & Reel BSS8402DWQ-13 Automotive SOT363 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See BSS8402DW Maximum Ratings Total Device ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) 200 mW P D Thermal Resistance, Junction to Ambient 625 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Maximum Ratings N-CHANNEL Q , 2N7002 Section ( T = +25C, unless otherwise specified.) A 1 Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Drain-Gate Voltage R 1.0M V 60 V GS DGR Gate-Source Voltage Continuous 20 V V GSS Pulsed 40 Drain Current (Note 6) Continuous 115 Continuous +100C I 73 mA D Pulsed 800 Maximum Ratings P-CHANNEL Q , BSS84 Section ( T = +25C, unless otherwise specified.) A 2 Characteristic Symbol Value Unit Drain-Source Voltage V -50 V DSS Drain-Gate Voltage R 20K V -50 V GS DGR Gate-Source Voltage Continuous V 20 V GSS Drain Current (Note 6) Continuous -130 mA I D Note: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Incorporateds suggested pad layout document, which can be found on our website at

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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