BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features I D Low On-Resistance V R (BR)DSS DS(ON) T = +25C A Low Gate Threshold Voltage -50V 10 V = -5V -130mA GS Low Input Capacitance Fast Switching Speed Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This MOSFET has been designed to minimize the on-state Qualified to AEC-Q101 Standards for High Reliability resistance (R ) and yet maintain superior switching performance, DS(ON) making it ideal for high efficiency power management applications. Mechanical Data Applications Case: SOT323 Case Material: Molded Plastic,Gree Molding Compound, UL General Purpose Interfacing Switch Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020C Analog Switch Terminal Connections: See Diagram e3 Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Weight: 0.006 grams (approximate) Drain SOT323 D Gate GS Source Top View Equivalent Circuit Top View Ordering Information (Note 4 & 5) Part Number Compliance Case Packaging BSS84W-7-F Standard SOT323 3000 / Tape & Reel BSS84WQ-7-F Automotive SOT323 3000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BSS84W Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -50 V DSS Drain-Gate Voltage (Note 6) V -50 V DGR Gate-Source Voltage Continuous V 20 V GSS Drain Current (Note 6) Continuous I -130 mA D Pulsed Drain Current (Note 6) -1 A I DM Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 6) 200 mW P D Thermal Resistance, Junction to Ambient 625 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -50 -75 V BV V = 0V, I = -250A DSS GS D -1 A V = -50V, V = 0V, T = +25C DS GS J Zero Gate Voltage Drain Current -2 A I DSS V = -50V, V = 0V, T = +125C DS GS J -100 nA V = -25V, V = 0V, T = +25C DS GS J Gate-Body Leakage nA I 10 V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -0.8 -1.6 -2.0 V V V = V , I = -1mA GS(th) DS GS D Static Drain-Source On-Resistance 6 10 R V = -5V, I = -0.1A DS(ON) GS D Forward Transconductance 0.05 S g V = -25V, I = -0.1A FS DS D DYNAMIC CHARACTERISTICS Input Capacitance 45 pF C iss V = -25V, V = 0V, f = 1.0MHz DS GS Output Capacitance 25 pF C oss Reverse Transfer Capacitance 12 pF C rss SWITCHING CHARACTERISTICS Turn-On Delay Time 10 ns t V = -30V, I = -0.27A, D(ON) DD D R = 50 , V = -10V GEN GS Turn-Off Delay Time 18 ns t D(OFF) Notes: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at