DMB53D0UDW N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features Mechanical Data N-Channel MOSFET and NPN Transistor in One Package Case: SOT-363 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage, 1.0V max Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal Connections: See Diagram Fast Switching Speed Terminals: Finish - Matte Tin annealed over Alloy 42 Lead frame. Low Input/Output Leakage Solderable per MIL-STD-202, Method 208 Ultra-Small Surface Mount Package Marking Information: See Page 5 Lead, Halogen and Antimony Free, RoHS Compliant (Note 2) Ordering Information: See Page 5 ESD Protected MOSFET Gate up to 2kV Weight: 0.006 grams (approximate) Gree Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT-363 D B E 2 Q Q 1 2 S G C 2 2 TOP VIEW ESD protected gate up to 2kV TOP VIEW Internal Schematic Maximum Ratings MOSFET, Q1 T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V 50 V DSS Gate-Source Voltage V 12 V GSS Drain Current (Note 1) Continuous I 160 mA D Pulsed Drain Current (Note 1) I 560 mA DM Maximum Ratings - NPN Transistor, Q2 T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 45 V CEO Emitter-Base Voltage V 6.0 V EBO Collector Current I 100 mA C Thermal Characteristics, Total Device T = 25C unless otherwise specified A Characteristic Symbol Value Unit Total Power Dissipation (Note 1) 250 mW P D Thermal Resistance, Junction to Ambient (Note 1) R 500 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at DMB53D0UDW Electrical Characteristics - MOSFET T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage BV 50 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 10 A V = 50V, V = 0V DSS DS GS 1.0 V = 8V, V = 0V GS DS Gate-Body Leakage I A GSS 5.0 V = 12V, V = 0V GS DS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V 0.7 0.8 1.0 V V = V , I = 250A GS(th) DS GS D 3.1 4 V = 4V, I = 100mA GS D Static Drain-Source On-Resistance R DS (ON) 4 5 V = 2.5V, I = 80mA GS D V = 10V, I = 100mA, DS D Forward Transconductance 180 mS g FS f = 1.0KHz DYNAMIC CHARACTERISTICS Input Capacitance C 25 pF iss V = 10V, V = 0V, DS GS Output Capacitance 5 pF C oss f = 1.0MHz Reverse Transfer Capacitance 2.1 pF C rss Electrical Characteristics - NPN Transistor T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage (Note 4) 50 V V I = 10A, I = 0 (BR)CBO C B Collector-Emitter Breakdown Voltage (Note 4) V 45 V I = 10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage (Note 4) V 6 V I = 1A, I = 0 (BR)EBO E C DC Current Gain (Note 4) h 200 290 450 V = 5.0V, I = 2.0mA FE CE C 100 I = 10mA, I = 0.5mA C B Collector-Emitter Saturation Voltage (Note 4) V mV CE(SAT) 300 I = 100mA, I = 5.0mA C B 700 I = 10mA, I = 0.5mA C B Base-Emitter Saturation Voltage (Note 4) V mV BE(SAT) 900 I = 100mA, I = 5.0mA C B V = 5.0V, I = 2.0mA 580 660 700 CE C Base-Emitter Voltage (Note 4) mV V BE 770 V = 5.0V, I = 10mA CE C 15 nA V = 30V CB Collector Cut-Off Current (Note 4) I CBO 5.0 A V = 30V, T = 150C CB A Collector-Emitter Cut-Off Current (Note 4) 100 nA I V = 45V CES CE V = 5.0V, I = 10mA, CE C Gain Bandwidth Product f 100 MHz T f = 100MHz Output Capacitance 4.5 pF C V = 10V, f = 1.0MHz OBO CB V = 5V, R = 2.0k, CE S Noise Figure NF 10 dB f = 1.0kHz, BW = 200Hz Notes: 4. Short duration pulse test used to minimize self-heating effect. 2 of 7 December 2009 DMB53D0UDW Diodes Incorporated www.diodes.com Document number: DS31675 Rev. 5 - 2