DMB54D0UV
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR
Features Mechanical Data
N-Channel MOSFET and PNP Transistor in One Package Case: SOT563
Low On-Resistance Case Material: Molded Plastic, Green Molding Compound.
UL Flammability Classification Rating 94V-0
Very Low Gate Threshold Voltage, 1.0V max
Moisture Sensitivity: Level 1 per J-STD-020
Low Input Capacitance
Terminal Connections: See Diagram
Fast Switching Speed
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Low Input/Output Leakage
Solderable per MIL-STD-202, Method 208
Ultra-Small Surface Mount Package
Weight: 0.006 grams (approximate)
ESD Protected MOSFET Gate up to 2kV
Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
Gree Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
D
2
B E
SOT563
Q Q
1 2
G
S C
2 2
Top View
Top View Bottom View
ESD PROTECTED TO 2kV
Internal Schematic
Ordering Information (Note 3)
Part Number Case Packaging
DMB54D0UV-7 SOT563 3,000/Tape & Reel
DMB54D0UV-13 SOT563 10,000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Diodes Inc.s Green policy can be found on our website at
DMB54D0UV
Maximum Ratings MOSFET, Q1 @T = 25C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage V 50 V
DSS
Gate-Source Voltage V 12 V
GSS
Drain Current (Note 4) Continuous 160 mA
I
D
Pulsed Drain Current (Note 4) 560 mA
I
DM
Maximum Ratings - PNP Transistor, Q2 @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage -50 V
V
CBO
Collector-Emitter Voltage -45 V
V
CEO
Emitter-Base Voltage -5.0 V
V
EBO
Collector Current -100 mA
I
C
Thermal Characteristics, Total Device @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 4) 250 mW
P
D
Thermal Resistance, Junction to Ambient (Note 4) 500
R C/W
JA
Operating and Storage Temperature Range -55 to +150
T , T C
J STG
Electrical Characteristics - MOSFET @T = 25C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BV 50 V V = 0V, I = 250 A
DSS GS D
Zero Gate Voltage Drain Current I 10 A V = 50V, V = 0V
DSS DS GS
V = 8V, V = 0V
1.0 GS DS
Gate-Body Leakage
I A
GSS
5.0
V = 12V, V = 0V
GS DS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage 0.7 0.8 1.0 V
V V = V , I = 250 A
GS(th) DS GS D
3.1 4 V = 4V, I = 100mA
GS D
Static Drain-Source On-Resistance
R
DS (ON)
4 5 V = 2.5V, I = 80mA
GS D
V = 10V, I = 100mA,
DS D
Forward Transconductance 180 mS
g
FS
f = 1.0KHz
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance C 25 pF
iss
V = 10V, V = 0V,
DS GS
Output Capacitance 5 pF
C
oss
f = 1.0MHz
Reverse Transfer Capacitance 2.1 pF
C
rss
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to product testing.
2 of 7 March 2012
DMB54D0UV
Diodes Incorporated
www.diodes.com
Document number: DS31676 Rev. 5 - 2