DMC4040SSDQ-13

DMC4040SSD 40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Matched N & P R Minimizes Power Losses DS(ON) I Max (A) D Fast Switching Minimizes Switching Losses Device V R Max (BR)DSS DS(ON) T = +25C A Dual Device Reduces PCB Area (Notes 6 & 8) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 7.5 25m @ VGS= 10V Halogen and Antimony Free. Green Device (Note 3) Q1 40V 6.2 40m @ V = 4.5V GS -7.3 25m @ V = -10V GS Q2 -40V -5.7 45m @ V = -4.5V GS Mechanical Data Description Case: SO-8 This MOSFET is designed to ensure that R of N and P channel DS(ON) Case Material: Molded Plastic, Green Molding Compound. FET are matched to minimize losses in both arms of the bridge. The UL Flammability Classification Rating 94V-0 DMC4040SSD is optimized for use in a 3-phase brushless DC motor Moisture Sensitivity: Level 1 per J-STD-020 circuit (BLDC), and CCFL backlighting. Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Applications Weight: 0.074 grams (Approximate) 3-Phase BLDC Motor CCFL Backlighting SO-8 D1 D2 S1 D1 G1 D1 G1 G2 S2 D2 D2 G2 S1 S2 Q2 P-Channel Q1 N-Channel Top View Top View Equivalent Circuit Ordering Information (Note 4) Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DMC4040SSD-13 C4040SD 13 12 2,500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC4040SSD Marking Information = Manufacturers Marking C4040SD = Product Type Marking Code YYWW = Date Code Marking C4040SD YY or YY= Year (ex: 10 = 2010) YY WW WW = Week (01 - 53) Maximum Ratings (@T = +25C, unless otherwise specified.) A Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit Drain-Source Voltage 40 -40 V DSS V Gate-Source Voltage V 20 20 GSS (Notes 6 & 8) 7.5 -7.5 5.8 -5.8 T = +70C (Notes 6 & 8) A Continuous Drain Current V = 10V I GS D (Notes 5 & 8) 5.7 -5.7 (Notes 5 & 9) 6.8 -6.8 A Pulsed Drain Current (Notes 7 & 8) 29.0 -29.0 V = 10V I GS DM Continuous Source Current (Body Diode) (Notes 6 & 8) 3.0 -3.0 I S Pulsed Source Current (Body Diode) (Notes 7 & 8) I 29.0 -29.0 SM Thermal Characteristics Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit 1.25 (Notes 5 & 8) 10 Power Dissipation 1.8 W (Notes 5 & 9) P D Linear Derating Factor 14.3 mW/C 2.14 (Notes 6 & 8) 17.2 (Notes 5 & 8) 100 Thermal Resistance, Junction to Ambient (Notes 5 & 9) 70 R JA C/W (Notes 6 & 8) 58 Thermal Resistance, Junction to Lead (Notes 5 & 10) R 51 JL Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as note (5), except the device is measured at t 10 sec. 7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300s. 8. For a dual device with one active die. 9. For a device with two active die running at equal power. 10. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 10 DMC4040SSD September 2015 Diodes Incorporated www.diodes.com Document number: DS32120 Rev. 3 - 2 NEW PRODUCT