DMG1023UV DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual P-Channel MOSFET Case: SOT563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal Connections: See Diagram Below Fast Switching Speed Terminals: Finish - Matte Tin annealed over Copper leadframe. Low Input/Output Leakage Solderable per MIL-STD-202, Method 208 Ultra-Small Surface Mount Package Weight: 0.006 grams (approximate) ESD Protected Up To 3KV Lead Free By Design/RoHS Compliant (Note 1) Halogen and Antimony FreeGree Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability D G S 2 1 1 SOT563 S G D 2 1 2 Bottom View Top View Top View ESD PROTECTED TO 3kV Ordering Information (Note 3) Part Number Case Packaging DMG1023UV-7 SOT563 3,000 / Tape & Reel DMG1023UV-13 SOT563 10,000 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc. s Green Policy can be found on our website at DMG1023UV Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage -20 V VDSS Gate-Source Voltage 6 V V GSS Steady T = 25C -1.03 A A Continuous Drain Current (Note 4) V = -4.5V I GS D State -0.68 T = 85C A Pulsed Drain Current (Note 5) I -3 A DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 4) P 530 mW D Thermal Resistance, Junction to Ambient T = 25C (Note 4) R 235 C/W A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV -20 - - V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = 25C I - - -100 nA V = -20V, V = 0V J DSS DS GS Gate-Source Leakage I - - 2.0 A V = 4.5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V -0.5 - -1.0 V V = V , I = -250A GS(th) DS GS D 0.5 0.75 V = -4.5V, I = -430mA GS D 0.7 1.05 V = -2.5V, I = -300mA GS D Static Drain-Source On-Resistance - 1.0 1.5 R V = -1.8V, I = -150mA DS (ON) GS D - 20 V = -1.7V, I = -100mA GS D - 25 V = -1.5V, I = -100mA GS D Forward Transfer Admittance - 0.9 - S Y V = -10V, I = -250mA fs DS D Diode Forward Voltage V -0.8 -1.2 V V = 0V, I = -150mA SD GS S DYNAMIC CHARACTERISTICS (Note 7) - 59.76 - Input Capacitance C pF iss V = -16V, V = 0V, DS GS - 12.07 - Output Capacitance C pF oss f = 1.0MHz - 6.36 - Reverse Transfer Capacitance C pF rss - 622.4 - Total Gate Charge Q pC g V = -4.5V, V = -10V, GS DS - 100.3 - Gate-Source Charge pC Qgs I = -250mA D - 132.2 - Gate-Drain Charge pC Q gd Turn-On Delay Time - 5.1 - ns t D(on) V = -10V, V = -4.5V, DD GS Turn-On Rise Time - 8.1 - ns t r R = 47, R = 10, L G Turn-Off Delay Time - 28.4 - ns t D(off) I = -200mA D 20.7 Turn-Off Fall Time t - - ns f Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout. 5. Repetitive rating, pulse width limited by junction temperature. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. 2 of 6 DMG1023UV April 2015 Diodes Incorporated www.diodes.com Document number: DS31975 Rev. 6 - 2