DMG3402LQ N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Low On-Resistance I D MAX BV R Low Gate Threshold Voltage DSS DS(ON) MAX T = +25C A Low Input Capacitance 52m V = 10V 4A GS Fast Switching Speed 30V 65m V = 4.5V 3A GS Low Input/Output Leakage 2A 85m V = 2.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Applications Mechanical Data DC-DC Converters Case: SOT23 Power Management Functions Case Material: Molded Plastic, Green Molding Compound. Battery Operated Systems and Solid-State Relays UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) SOT23 D D G G S S Top View Pin Configuration Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMG3402LQ-7 SOT23 3000/Tape & Reel DMG3402LQ-13 SOT23 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMG3402LQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain Source Voltage V 30 V DSS Gate-Source Voltage V 12 V GSS Drain Current (Note 6) I 4.0 A D Body-Diode Continuous Current (Note 6) I 1.5 A S Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) P 1.4 W D Thermal Resistance, Junction to Ambient T = +25C (Note 6) R 90 C/W A JA Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 30V, V = 0V DSS DS GS Gate-Body Leakage I 100 nA V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.6 1.4 V V V = V , I = 250A GS(TH) DS GS D 52 V = 10V, I = 4A GS D Static Drain-Source On-Resistance 65 m R V = 4.5V, I = 3A DS(ON) GS D 85 V = 2.5V, I = 2A GS D Forward Transconductance Y 6.6 s V = 5V, I = 3.1A fs DS D Source-Drain Diode Forward Voltage 1.16 V V V = 0V, I = 2.0A SD GS S DYNAMIC CHARACTERISTICS(Note 8) V =0V, V = 0V, DS GS Gate Resistance R 2.2 g f = 1MHz V = 10 V, V = 15V, GS DS Total Gate Charge (10V) Q 11.7 nC g I = 4 A D Total Gate Charge (4.5V) Q 5.5 nC g V =10 V, V = 15V, GS DS Gate-Source Charge 1.1 nC Q gs I = 4 A D Gate-Drain Charge 1.8 nC Q gd Turn-On Delay Time 1.9 ns t D(ON) Turn-On Rise Time 1.6 ns t V = 15V, V = 10V, R DD GEN Turn-Off Delay Time 10.3 ns R =3, R = 3.75 t GEN L D(OFF) Turn-Off Fall Time t 2.0 ns F Input Capacitance C 464 pF iss V = 15V, V = 0V DS GS Output Capacitance C 49.5 pF oss f = 1.0MHz Reverse Transfer Capacitance C 43.8 pF rss Notes: 6. Device mounted on FR-4 PCB. t 5 sec. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 7 DMG3402LQ January 2019 Diodes Incorporated www.diodes.com Document number: DS41443 Rev. 2 - 2