DMG3404L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I Max D BV R Max DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 25m V = 10V 5.8A GS Low Input/Output Leakage 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 35m V = 4.5V 4.8A GS Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications Case: SOT23 This MOSFET has been designed to minimize the on-state resistance Case Material: Molded Plastic, Green Molding Compound. (R ) and yet maintain superior switching performance, making it DS(ON) UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Battery Charging e3 Solderable per MIL-STD-202, Method 208 Power Management Functions Terminals Connections: See Diagram Below DC-DC Converters Weight: 0.009138 grams (Approximate) Portable Power Adaptors D SOT23 D G G S S Top View Top View Pin Configuration Equiva lent Circuit Ordering Information (Note 4) Part Number Case Packaging DMG3404L-7 SOT23 3000/Tape & Reel DMG3404L-13 SOT23 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG3404L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 4.2 A Continuous Drain Current (Note 5) V = 10V I A GS D State 3.5 T = +70C A Steady T = +25C 5.8 A A Continuous Drain Current (Note 6) V = 10V I GS D State 4.9 T = +70C A Pulsed Drain Current (Pulse Width 10S, Duty Cycle 1%) I 30 A DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 0.78 W D Thermal Resistance, Junction to Ambient (Note 5) R 164 C/W JA Power Dissipation (Note 6) P 1.33 W D Thermal Resistance, Junction to Ambient (Note 6) R 96 C/W JA Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1.0 A V = 30V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1.0 1.5 2.0 V V V = V , I = 250A GS(TH) DS GS D 21 25 V = 10V, I = 5.8A GS D Static Drain-Source On-Resistance R m DS(ON) 24 35 V = 4.5V, I = 4.8A GS D Diode Forward Voltage 0.75 1.0 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 641 pF C iss V = 15V, V = 0V, DS GS 66 Output Capacitance C pF oss f = 1.0MHz 51 Reverse Transfer Capacitance C pF rss 2.2 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 13.2 Total Gate Charge Q nC g 1.7 Gate-Source Charge Q nC V = 10V, V = 15V, I = 5.8A gs GS DS D Gate-Drain Charge 2.2 nC Q gd Turn-On Delay Time 3.3 ns t D(ON) Turn-On Rise Time 4.4 ns t V = 15V, V = 10V, R DD GS Turn-Off Delay Time 22 ns R = 1.25, R = 3 t L g D(OFF) 5.2 Turn-Off Fall Time t ns F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 DMG3404L January 2016 Diodes Incorporated www.diodes.com Document number: DS37640 Rev. 2 - 2