DMG4800LFG N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: DFN3030-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals: Finish - NiPdAu over Copper lead frame. Solderable Lead Free By Design/RoHS Compliant (Note 1) per MIL-STD-202, Method 208 Gree Device (Note 2) Polarity: See Diagram Qualified to AEC-Q101 Standards for High Reliability Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.0172 grams (approximate) 87 6 5 56 7 8 D GS S S 43 2 1 23 4 1 TOP VIEW BOTTOM VIEW BOTTOM VIEW TOP VIEW Pin Configuration Internal Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage 25 V V GSS Drain Current (Note 3) Steady T = 25C 7.44 A A I D State 4.82 T = 85C A Pulsed Drain Current (Note 4) I 40 A DM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit Total Power Dissipation (Note 3) 0.94 W P D Thermal Resistance, Junction to Ambient R 133 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at DMG4800LFG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV 30 - - V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current TJ = 25C I - - 1.0 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage 0.8 - 1.5 V V V = V , I = 250 A GS(th) DS GS D 11 17 V = 10V, I = 9A GS D Static Drain-Source On-Resistance R - m DS (ON) 15 24 V = 4.5V, I = 7A GS D Forward Transfer Admittance - 8 - S Y V = 10V, I = 9A fs DS D Diode Forward Voltage V - 0.7 1.0 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 6) - 798 - Input Capacitance C pF iss V = 10V, V = 0V, DS GS - 128 - Output Capacitance C pF oss f = 1.0MHz - 122 - Reverse Transfer Capacitance C pF rss - 1.37 - Gate Resistance R V =0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q - 9.47 - nC g V = 5V, V = 15V, GS DS Gate-Source Charge - 1.87 - nC Q gs I = 9A D Gate-Drain Charge - 5.60 - nC Q gd Turn-On Delay Time - 5.03 - ns t D(on) Turn-On Rise Time - 4.50 - t ns V = 15V, V = 10V, r DD GEN - 26.33 - Turn-Off Delay Time t ns R = 15 , R = 6 , I = 1A D(off) L G D - 8.55 - Turn-Off Fall Time t ns f Notes: 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to product testing. 30 30 V = 10V GS V = 5V V = 4.5V DS 25 25 GS 20 20 V = 3.0V GS 15 15 10 10 T = 150C V = 2.5V GS A T = 125C T = 85C A A 5 5 T = 25C A T = -55C A V = 2.0V GS 0 0 0 0.5 1 1.5 2 1 1.5 2 2.5 3 V , DRAIN-SOURCE VOLTAGE (V) V , GATE-SOURCE VOLTAGE (V) DS GS Fig. 2 Typical Transfer Characteristic Fig. 1 Typical Output Characteristic 2 of 6 November 2009 DMG4800LFG Diodes Incorporated www.diodes.com Document number: DS31785 Rev. 3 - 2 NEW PRODUCT I, DRAIN CURRENT (A) D I, DRAIN CURRENT (A) D