X-On Electronics has gained recognition as a prominent supplier of DMG6602SVTQ-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMG6602SVTQ-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.
We are delighted to provide the DMG6602SVTQ-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMG6602SVTQ-7 and other electronic components in the MOSFETs category and beyond.
The DMG6602SVTQ-7 is a dual N-channel MOSFET device from Diodes Incorporated. The part is built using the latest Trench PowerFET technology and rated for a maximum current of 6.25A and a maximum drain-source voltage of 60V. The gate-source threshold voltage is 3.3V, making it suitable for applications requiring low voltage driving like BLDC motor control circuits and remote controls. The low gate charge also makes it suitable for various switching applications. The RDS(on) for DMG6602SVTQ-7 is 57mO @ 26v and 69mO @ 10v.
