DMG6968UDM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low Gate Charge Case: SOT26 Low R : Case Material - Molded Plastic, Green Molding DS(ON) 24m V = 4.5V Compound. UL Flammability Classification Rating 94V-0 GS 28m V = 2.5V Moisture Sensitivity: Level 1 per J-STD-020 GS 34m V = 1.8V Terminals: Finish Matte Tin annealed over Copper leadframe GS Low Input/Output Leakage Solderable per MIL-STD-202, Method 208 e3 ESD Protected up to 2kV HBM Terminal Connections: See Diagram Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.0008 grams (approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability DD SOT26 S 1 G 1 G1 G2 D/D D/D 1 2 1 2 G S 2 2 S1 S2 ESD PROTECTED TO 2kV N-Channel N-Channel Top View Top View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMG6968UDM-7 SOT26 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG6968UDM Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage (Note 5) V 12 V GSS Drain Current (Note 6) Continuous T = +25C A 6.5 A I D 5.2 T = +70C A Pulsed Drain Current (Note 7) 30 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 0.85 W P D Thermal Resistance, Junction to Ambient (Note 6) t 10s 147 C/W R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 5. AEC-Q101 VGS maximum is 9.6V. 6. Device mounted on 1 x1 , FR-4 PC board with 2 oz. Copper and test pulse width t 10s. 7. Repetitive Rating, pulse width limited by junction temperature. Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic SymbolMin Typ Max Unit Test Condition STATIC CHARACTERISTICS Drain-Source Breakdown Voltage BV 20 V I = 250A, V = 0V DSS D GS Zero Gate Voltage Drain Current 1 A I V = 20V, V = 0V DSS DS GS Gate-Body Leakage Current A I 10 V = 0V, V = 10V GSS DS GS Gate-Source Breakdown Voltage BV 12 V V = 0V, I = 250A SGS DS G Gate Threshold Voltage V 0.5 0.9 V V = V , I = 250A GS(th) DS GS D 17 24 V = 4.5V, I = 6.5A GS D Static Drain-Source On-Resistance (Note 8) R 20 28 m V = 2.5V, I = 5.5A DS (ON) GS D 26 34 V = 1.8V, I = 3.5A GS D Forward Transfer Admittance 8 S Y V = 10V, I = 5A FS DS D Diode Forward Voltage (Note 8) 0.7 1.0 V V I = 2.25A, V = 0V SD S GS DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 143 pF iss V = 10V, V = 0V DS GS Output Capacitance C 74 pF oss f = 1.0MHz Reverse Transfer Capacitance 29 pF C rss Gate Resisitance 202 R V = 0V, V = 0V, f = 1MHz G GS DS SWITCHING CHARACTERISTICS (Note 9) Total Gate Charge Q 8.8 nC g Gate-Source Charge Q 1.4 nC V = 4.5V, V = 10V, I = 6.5A gs GS DS D Gate-Drain Charge 3.0 nC Q gd Turn-On Delay Time 53 ns t D(on) Turn-On Rise Time 78 ns t r V = 10V, V = 4.5V, DD GS R = 10, R = 6 Turn-Off Delay Time t 562 ns L G D(off) Turn-Off Fall Time t 234 ns f Notes: 8. Test pulse width t = 300ms. 9. Guaranteed by design. Not subject to production testing. 2 of 6 June 2014 DMG6968UDM Diodes Incorporated www.diodes.com Document number: DS31758 Rev. 5 - 2 NEW PRODUCT