DMHC3025LSDQ-13 Diodes Incorporated

DMHC3025LSDQ-13 electronic component of Diodes Incorporated
DMHC3025LSDQ-13 Diodes Incorporated
DMHC3025LSDQ-13 MOSFETs
DMHC3025LSDQ-13  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DMHC3025LSDQ-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMHC3025LSDQ-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. DMHC3025LSDQ-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET 30V Comp Enh FET H-Bridge 2xN 2xP
Datasheet: DMHC3025LSDQ-13 Datasheet (PDF)
Price (USD)
1: USD 1.775 ea
Line Total: USD 1.78 
Availability : 4258
  
Ship by Fri. 29 Aug to Tue. 02 Sep
QtyUnit Price
1$ 1.775
10$ 1.0776
100$ 0.6556
500$ 0.5137
1000$ 0.4675
2500$ 0.429
5000$ 0.4125

Availability 4258
Ship by Fri. 29 Aug to Tue. 02 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.775
10$ 1.0776
100$ 0.6556
500$ 0.5137
1000$ 0.4675
2500$ 0.429
5000$ 0.4125

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMHC3025LSDQ-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMHC3025LSDQ-13 and other electronic components in the MOSFETs category and beyond.

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P2G N2G N2D/P2D N1S/N2S P1S/P2S N1D/P1D N1G P1G DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features 2 x N + 2 x P channels in a SOIC package Low On-Resistance I max D Device V R max (BR)DSS DS(ON) T = +25C Low Input Capacitance A Fast Switching Speed 25m V = 10V 6.0 GS N-Channel 30V Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 40m V = 4.5V 4.6 GS Halogen and Antimony Free. Green Device (Note 3) 50m V = -10V -4.2 GS Qualified to AEC-Q101 Standards for High Reliability P-Channel -30V 80m V = -4.5V -3.2 GS Mechanical Data Description Case: SO-8 This new generation complementary MOSFET H-Bridge features low Case Material: Molded Plastic,Gree Molding Compound. on-resistance achievable with low gate drive. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Applications Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 DC Motor control DC-AC Inverters Weight: 0.008 grams (approximate) SO-8 H-Bridge Top View Top View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMHC3025LSD-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMHC3025LSD Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 1.5 W D Steady State 83 Thermal Resistance, Junction to Ambient (Note 5) R JA t < 10s 50 C/W Thermal Resistance, Junction to Case R 14.5 JC Operating and Storage Temperature Range T T -55 to 150 C J, STG Maximum Ratings N-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS T = +25 C Steady A 6.0 A I D State 4.8 T = +70 C A Continuous Drain Current (Note 5) V = 10V GS T = +25 C 7.8 A t < 10s I A D 6.1 T = +70 C A T = +25 C Steady A 4.6 A I D State 3.6 T = +70 C A Continuous Drain Current (Note 5) V = 4.5V GS T = +25 C 6.1 A t < 10s I A D 4.8 T = +70 C A Maximum Continuous Body Diode Forward Current (Note 5) I 2.5 A S Pulsed Drain Current (10 s pulse, duty cycle = 1%) I 60 A DM Maximum Ratings P-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 30 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25 C -4.2 A A I D State -3.3 T = +70 C A Continuous Drain Current (Note 5) V = -10V GS T = +25 C -5.4 A t < 10s I A D T = +70 C -4.3 A Steady T = +25 C -3.2 A A I D State -2.5 T = +70 C A Continuous Drain Current (Note 5) V = -4.5V GS T = +25 C -4.3 A t < 10s I A D -3.3 T = +70 C A Maximum Continuous Body Diode Forward Current (Note 5) I -2.5 A S Pulsed Drain Current (10 s pulse, duty cycle = 1%) -30 A I DM Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 9 November 2013 DMHC3025LSD Diodes Incorporated www.diodes.com Document number: DS35821 Rev. 4 - 2 NEW PRODUCT ADVANCE INFORMATION

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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