X-On Electronics has gained recognition as a prominent supplier of DMHC4035LSD-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMHC4035LSD-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.
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P2G N2G N2D/P2D N1S/N2S P1S/P2S N1D/P1D P1G N1G DMHC4035LSD 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features I max 2 x N + 2 x P channels in a SOIC package D Device V R max (BR)DSS DS(ON) T = +25C Low On-Resistance A 4.5A Low Input Capacitance 45m V = 10V GS N-Channel 40V Fast Switching Speed 58m V = 4.5V 4A GS Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 65m V = -10V -3.7A GS P-Channel -40V Halogen and Antimony Free. Green Device (Note 3) 100m V = -4.5V -2.9A GS Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation complementary MOSFET H-Bridge features low Case: SO-8 on-resistance achievable with low gate drive. Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram DC Motor Control Terminals: Finish Matte Tin annealed over Copper leadframe. DC-AC Inverters Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (approximate) SO-8 H-Bridge Top View Top View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Compliance Case Packaging DMHC4035LSD-13 Standard SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMHC4035LSD Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 1.5 W D Steady State 85 Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 53 C/W Thermal Resistance, Junction to Case 15 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Maximum Ratings N-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 4.5 A I A D State 3.5 T = +70C A Continuous Drain Current (Note 5) V = 10V GS 5.8 T = +25C A t<10s I A D T = +70C 4.5 A Steady T = +25C 4 A I A D State 3.1 T = +70C A Continuous Drain Current (Note 5) V = 4.5V GS 5.1 T = +25C A t<10s A I D 4 T = +70C A 1.5 Maximum Continuous Body Diode Forward Current (Note 5) I A S 25 Pulsed Drain Current (10s pulse, duty cycle = 1%) I A DM Maximum Ratings P-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -40 V DSS Gate-Source Voltage V 20 V GSS Steady -3.7 T = +25C A A I D State -2.9 T = +70C A Continuous Drain Current (Note 5) V = -10V GS T = +25C -4.8 A t<10s I A D T = +70C -3.8 A Steady T = +25C -2.9 A A I D State -2.3 T = +70C A Continuous Drain Current (Note 5) V = -4.5V GS T = +25C -3.9 A t<10s I A D T = +70C -3.0 A -1.5 Maximum Continuous Body Diode Forward Current (Note 5) I A S -15 Pulsed Drain Current (10s pulse, duty cycle = 1%) I A DM Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 9 January 2014 DMHC4035LSD Diodes Incorporated www.diodes.com Document number: DS36287 Rev. 1 - 2 NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT
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