DMMT3906 MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-26 Intrinsically Matched PNP Pair (Note 1) B Dim Min Max Typ C 1,2 C 2 1 Small Surface Mount Package A 0.35 0.50 0.38 2% h Matched Tolerance FE B 1.50 1.70 1.60 B C Lead Free/RoHS Compliant (Note 3) Gree Device (Note 4 and 5) C 2.70 3.00 2.80 E NC E 1 2 D 0.95 Mechanical Data F 0.55 H Case: SOT-26 H 2.90 3.10 3.00 Case Material: Molded Plastic,Gree Molding K J 0.013 0.10 0.05 M Compound, Note 5. UL Flammability Classification Rating 94V-0 K 1.00 1.30 1.10 Terminal Connections: See Diagram L 0.35 0.55 0.40 J Terminals: Solderable per MIL-STD-202, Method 208 D F L M 0.10 0.20 0.15 Lead Free Plating (Matte Tin Finish annealed over All Dimensions in mm Copper leadframe). Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.015 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -40 V CBO Collector-Emitter Voltage -40 V V CEO Emitter-Base Voltage -5.0 V V EBO Collector Current - Continuous -200 mA I C Power Dissipation (Note 2) P 225 mW d Thermal Resistance, Junction to Ambient (Note 2) 556 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. Built with adjacent die from a single wafer. 2. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in. pad layout as shown on suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage -40 V V I = -10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V -40 V I = -1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5.0 V I = -10A, I = 0 (BR)EBO E C Collector Cutoff Current I -50 nA V = -30V, V = -3.0V CEX CE EB(OFF) Base Cutoff Current I -50 nA V = -30V, V = -3.0V BL CE EB(OFF) ON CHARACTERISTICS (Note 6) I = -100A, V = -1.0V 60 C CE I = -1.0mA, V = -1.0V 80 C CE DC Current Gain (Note 7) h 100 300 I = -10mA, V = -1.0V FE C CE 60 I = -50mA, V = -1.0V C CE 30 I = -100mA, V = -1.0V C CE -0.25 I = -10mA, I = -1.0mA C B Collector-Emitter Saturation Voltage V V CE(SAT) -0.40 I = -50mA, I = -5.0mA C B -0.65 -0.85 I = -10mA, I = -1.0mA C B Base-Emitter Saturation Voltage V V BE(SAT) -0.95 I = -50mA, I = -5.0mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 4.5 pF V = -5.0V, f = 1.0MHz, I = 0 obo CB E Input Capacitance 10 pF C V = -0.5V, f = 1.0MHz, I = 0 ibo EB C Input Impedance 2.0 12 h k ie -4 Voltage Feedback Ratio h 0.1 10 x 10 re V = 10V, I = 1.0mA, CE C f = 1.0kHz Small Signal Current Gain h 100 400 fe Output Admittance h 3.0 60 S oe Current Gain-Bandwidth Product f 250 MHz V = -20V, I = -10mA, f = 100MHz T CE C V = -5.0V, I = -100A, CE C Noise Figure NF 4.0 dB R = 1.0k, f = 1.0kHz S SWITCHING CHARACTERISTICS Delay Time 35 ns t V = -3.0V, I = -10mA, d CC C Rise Time 35 ns V = 0.5V, I = -1.0mA t BE(off) B1 r Storage Time t 225 ns V = -3.0V, I = -10mA, s CC C Fall Time t 75 ns I = I = -1.0mA f B1 B2 Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. The DC current gain, h , is matched at I = -10mA and V = -1.0V with typical matched tolerances of 1% and maximum of 2%. FE C CE 100 350 300 250 200 10 150 100 50 0 1 0 175 200 25 50 75 100 125 150 1 0.1 10 100 T , AMBIENT TEMPERATURE (C) V , COLLECTOR-BASE VOLTAGE (V) A CB Fig. 1, Max Power Dissipation vs. Fig. 2, Input and Output Capacitance vs. Ambient Temperature, Total Device Collector-Base Voltage DS30293 Rev. 6 - 2 2 of 4 DMMT3906 Diodes Incorporated www.diodes.com P , POWER DISSIPATION (mW) D C , INPUT CAPACITANCE (pF) IBO C , OUTPUT CAPACITANCE (pF) OBO