DMN1045UFR4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V R (BR)DSS DS(ON) Low Input/Output Leakage T = +25C A Fast Switching Speed 45m V = 4.5V ESD Protected Gate GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) 64m V = 2.5V GS 12V 3.2A 85m V = 1.8V GS 100m V = 1.5V GS Mechanical Data Case: X2-DFN1010-3 Description and Applications Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 This new generation MOSFET has been designed to minimize the Moisture Sensitivity: Level 1 per J-STD-020 on-state resistance (R ) and yet maintain superior switching DS(ON) Terminal Connections: See Diagram performance, making it ideal for high efficiency power management Terminals: Finish NiPdAu Annealed over Copper Leadframe. applications. Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.0015 Grams (Approximate) Backlighting Load Switch D X2-DFN1010-3 G G D S ESD PROTECTED Gate Protection S Diode Bottom View Equivalent Circuit Pin-out Top View Ordering Information (Note 4) Part Number Case Packaging DMN1045UFR4-7 X2-DFN1010-3 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN1045UFR4 Maximum Ratings ( T = +25C, unless otherwise specified) A Characteristic Symbol Value Unit Drain-Source Voltage V 12 V DSS Gate-Source Voltage V 8 V GSS T = +25C Steady A 3.2 Continuous Drain Current (Note 6) V = 4.5V I A GS D State 2.5 T = +70C A 15 A Pulsed Drain Current (10s pulse, Duty cycle = 1%) I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.5 W D Thermal Resistance, Junction to Ambient T = +25C (Note 5) R 251 C/W A JA Total Power Dissipation (Note 6) P 1.26 W D Thermal Resistance, Junction to Ambient T = +25C (Note 6) R 99 C/W A JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 12 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 12V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.4 1.0 V V = V , I = 250A GS(th) DS GS D V = 4.5V, I = 3.2A GS D 25 45 32 64 V = 2.5V, I = 3.2A GS D Static Drain-Source On-Resistance m R DS(ON) 40 85 V = 1.8V, I = 1A GS D 50 100 V = 1.5V, I = 0.1A GS D Diode Forward Voltage V 1.2 V V = 0V, I = 1.0A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 375 pF iss Output Capacitance 57 pF C V = 10V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance 51 pF C rss Total Gate Charge 4.8 nC Q g V = 4.5V, V = 10V GS DS Gate-Source Charge 0.6 nC Q gs I = 3.2A D Gate-Drain Charge Q 1.2 nC gd 7 Turn-On Delay Time t ns D(on) 25 Turn-On Rise Time t ns V = 10V, V = 4.5V r DD GEN , 93 R = 6, I = 3.2A Turn-Off Delay Time t ns GEN D D(off) 48 Turn-Off Fall Time t ns f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 DMN1045UFR4 October 2014 Diodes Incorporated www.diodes.com Document number: DS37303 Rev. 2 - 2 NEW PRODUCT