DMN10H120SE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max Low On-Resistance D V R max (BR)DSS DS(ON) T = +25C A Low Input Capacitance 110m V = 10V 3.6A GS Fast Switching Speed 100V 122m V = 6.0V 3.4A Low Input/Output Leakage GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new generation MOSFET is designed to minimize the on-state Mechanical Data resistance (R ) and yet maintain superior switching performance, DS(ON) making it ideal for high-efficiency power management applications. Case: SOT223 Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections: See Diagram Below Power Management Functions Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) D SOT223 G S Equivalent Circuit Top View Pin Out - Top View Ordering Information (Note 4) Part Number Qualification Case Packaging DMN10H120SE-13 Standard SOT223 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN10H120SE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 3.6 A A Continuous Drain Current (Note 6) V = 10V I GS D State 2.9 T = +70C A Pulsed Drain Current (10 s pulse, duty cycle 1%) 16 A I DM Maximum Body Diode Continuous Current (Note 6) 2.5 A I S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units (Note 5) 1.3 Total Power Dissipation W P D (Note 6) 2.1 (Note 5) 94 Thermal Resistance, Junction to Ambient R JA (Note 6) 58 C/W (Note 6) Thermal Resistance, Junction to Case 8.2 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 100 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1.0 A I V = 80V, V = 0V DSS DS GS Gate-Body Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1.5 2.6 3.0 V V = V , I = 250A GS(th) DS GS D 77 110 V = 10V, I = 3.3A GS D Static Drain-Source On-Resistance R m DS (ON) 84 122 V = 6.0V, I = 3.0A GS D Diode Forward Voltage V 0.8 1.2 V V = 0V, I = 3.2A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 549 Input Capacitance C iss 41 Output Capacitance C pF V = 50V, V = 0V, f = 1.0MHz oss DS GS 19 Reverse Transfer Capacitance C rss Gate Resistance 1.6 VDS = 0V, VGS = 0V, f = 1.0MHz R g 10 Total Gate Charge (V = 10V) Q GS g 5.2 Total Gate Charge (V = 4.5V) Q GS g nC V = 50V, I = 3.3A DS D Gate-Source Charge 2.3 Q gs 2.6 Gate-Drain Charge Q gd 3.8 Turn-On Delay Time t D(on) 1.8 Turn-On Rise Time t r V = 50V, V = 10V, DD GS nS 11 R = 6.0, I = 3.3A Turn-Off Delay Time t G D D(off) 2.5 Turn-Off Fall Time t f 21 Reverse Recovery Time t nS rr V = 0V, I =1.1A, di/dt=100A/s GS S Reverse Recovery Charge 17 nC Q rr Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 January 2015 DMN10H120SE Diodes Incorporated www.diodes.com Document number: DS37484 Rev. 3 - 2 NEW PRODUCT ADVANCEED INFORMATION