DMN10H120SFG 100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low R ensures on state losses are minimized DS(ON) I max D V R max (BR)DSS DS(ON) Small form factor thermally efficient package enables higher T = +25C A density end products 110m V = 10V 3.8 A GS Occupies just 33% of the board area occupied by SO-8 enabling smaller end product 100V 122m V = 6.0V 3.6 A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(on) Case: POWERDI3333-8 ideal for high efficiency power management applications. Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections Indicator: See diagram Power Management Functions Terminals: Finish Matte Tin annealed over Copper leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) POWERDI3333-8 Pin 1 8 S 1 S S 7 2 G 6 3 D 5 4 D D Top View D Internal Schematic Top View Bottom View Ordering Information (Note 4) Part Number Compliance Case Packaging DMN10H120SFG-7 Standard POWERDI3333-8 2000/Tape & Reel DMN10H120SFG-13 Standard POWERDI3333-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN10H120SFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS T = +25C Steady A 3.8 A I D State 3.0 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 5.3 A t<10s I A D 4.2 T = +70C A Steady T = +25C 3.6 A A ID State 2.9 T = +70C A Continuous Drain Current (Note 6) V = 6V GS T = +25C 5.0 A t<10s A I D 4.0 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I 20 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 1.0 T = +25C A Total Power Dissipation (Note 5) P W D 0.6 T = +70C A Steady state 131 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 76 2.4 T = +25C A Total Power Dissipation (Note 6) P W D 1.5 T = +70C A Steady state 52 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 27 C/W Thermal Resistance, Junction to Case (Note 6) R 6.9 JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 100 - - V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I - - 1.0 A V = 80V, V = 0V DSS DS GS Gate-Source Leakage I - - 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1.5 2.0 3.0 V V = V , I = 250A GS(th) DS GS D - 68 110 VGS = 10V, ID = 3.3A Static Drain-Source On-Resistance R m DS (ON) - 75 122 V = 6.0V, I = 3.0A GS D Forward Transfer Admittance - 13 - S Y V = 10V, I = 3.3A fs DS D Diode Forward Voltage - 0.78 - V V V = 0V, I = 3.2A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance - 549 - pF C iss V = 50V, V = 0V, DS GS Output Capacitance - 41.1 - pF C oss f = 1.0MHz Reverse Transfer Capacitance - 19.0 - pF C rss Gate Resistance R - 1.6 - V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge V = 10V Q - 10.6 - nC GS g Total Gate Charge V = 4.5V Q - 5.2 - nC GS g V = 50V, I = 3.3A DS D Gate-Source Charge Q - 2.3 - nC gs Gate-Drain Charge - 2.6 - nC Qgd Turn-On Delay Time - 3.8 - ns t D(on) Turn-On Rise Time - 1.8 - ns t V = 10V, V = 50V, r GS DS Turn-Off Delay Time - 11.5 - ns R = 6.0, I = 3.3A t G D D(off) Turn-Off Fall Time - 2.5 - ns t f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated 2 of 6 August 2014 DMN10H120SFG Diodes Incorporated www.diodes.com Document number: DS36250 Rev. 2 - 2 ADVANCE INFORMATION