DMN10H120SFG
100V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary Features and Benefits
Low R ensures on state losses are minimized
DS(ON)
I max
D
V R max
(BR)DSS DS(ON)
Small form factor thermally efficient package enables higher
T = +25C
A
density end products
110m @ V = 10V 3.8 A
GS Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
100V
122m @ V = 6.0V 3.6 A
GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(R ) and yet maintain superior switching performance, making it
DS(on)
Case: POWERDI3333-8
ideal for high efficiency power management applications.
Case Material: Molded Plastic,Gree Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Applications
Terminal Connections Indicator: See diagram
Power Management Functions
Terminals: Finish Matte Tin annealed over Copper leadframe.
DC-DC Converters
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
POWERDI3333-8
Pin 1
8
S 1
S
S
7
2
G
6
3
D 5
4
D
D
Top View
D
Internal Schematic
Top View Bottom View
Ordering Information (Note 4)
Part Number Compliance Case Packaging
DMN10H120SFG-7 Standard POWERDI3333-8 2000/Tape & Reel
DMN10H120SFG-13 Standard POWERDI3333-8 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN10H120SFG
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V 100 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C
Steady A 3.8
A
I
D
State 3.0
T = +70C
A
Continuous Drain Current (Note 6) V = 10V
GS
T = +25C 5.3
A
t<10s I A
D
4.2
T = +70C
A
Steady T = +25C 3.6
A
A
ID
State 2.9
T = +70C
A
Continuous Drain Current (Note 6) V = 6V
GS
T = +25C 5.0
A
t<10s A
I
D
4.0
T = +70C
A
Pulsed Drain Current (10s pulse, duty cycle = 1%) I 20 A
DM
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
1.0
T = +25C
A
Total Power Dissipation (Note 5) P W
D
0.6
T = +70C
A
Steady state 131
Thermal Resistance, Junction to Ambient (Note 5) C/W
R JA
t<10s 76
2.4
T = +25C
A
Total Power Dissipation (Note 6) P W
D
1.5
T = +70C
A
Steady state 52
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
t<10s 27
C/W
Thermal Resistance, Junction to Case (Note 6) R 6.9
JC
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 100 - - V V = 0V, I = 250 A
DSS GS D
Zero Gate Voltage Drain Current I - - 1.0 A V = 80V, V = 0V
DSS DS GS
Gate-Source Leakage I - - 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 1.5 2.0 3.0 V V = V , I = 250A
GS(th) DS GS D
- 68 110
VGS = 10V, ID = 3.3A
Static Drain-Source On-Resistance R m
DS (ON)
- 75 122
V = 6.0V, I = 3.0A
GS D
Forward Transfer Admittance - 13 - S
|Y | V = 10V, I = 3.3A
fs DS D
Diode Forward Voltage - 0.78 - V
V V = 0V, I = 3.2A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance - 549 - pF
C
iss
V = 50V, V = 0V,
DS GS
Output Capacitance - 41.1 - pF
C
oss
f = 1.0MHz
Reverse Transfer Capacitance - 19.0 - pF
C
rss
Gate Resistance R - 1.6 - V = 0V, V = 0V, f = 1.0MHz
g DS GS
Total Gate Charge V = 10V Q - 10.6 - nC
GS g
Total Gate Charge V = 4.5V Q - 5.2 - nC
GS g
V = 50V, I = 3.3A
DS D
Gate-Source Charge Q - 2.3 - nC
gs
Gate-Drain Charge - 2.6 - nC
Qgd
Turn-On Delay Time - 3.8 - ns
t
D(on)
Turn-On Rise Time - 1.8 - ns
t V = 10V, V = 50V,
r GS DS
Turn-Off Delay Time - 11.5 - ns R = 6.0, I = 3.3A
t G D
D(off)
Turn-Off Fall Time - 2.5 - ns
t
f
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
2 of 6
August 2014
DMN10H120SFG
Diodes Incorporated
www.diodes.com
Document number: DS36250 Rev. 2 - 2
ADVANCE INFORMATION