DMN10H220L 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D V R (BR)DSS DS(on) max Low Input Capacitance T = +25C A Fast Switching Speed 220m V = 10V 1.6A GS Low Input/Output Leakage 100V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 1.3A 250m V = 4.5V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: SOT23 resistance (R ) yet maintain superior switching performance, Case Material: Molded Plastic, Green Molding Compound DS(on) making it ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Applications Terminals: FinishMatte Tin Annealed Over Copper Leadframe. Load Switch Solderable per MIL-STD-202, Method 208 e3 Weight: 0.0072 grams (Approximate) D SOT23 D G G S S Top View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number Compliance Case Packaging DMN10H220L-7 Standard SOT23 3000/Tape & Reel DMN10H220L-13 Standard SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN10H220L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 100 V V DSS Gate-Source Voltage V V 16 GSS T = +25C 1.6 A (Note 6) I A D 1.3 T = +70C A Continuous Drain Current (Note 5) V = 10V GS T = +25C 1.4 A (Note 5) A I D 1.1 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 0.6 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 8 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 1.3 T = +25C A Total Power Dissipation (Note 6) P W D 0.8 T = +70C A (Note 6) 94 Thermal Resistance, Junction to Ambient R C/W JA (Note 5) 177 Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 100 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 100V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1 2.5 V V V = V , I = 250A GS(th) DS GS D 220 V = 10V, I = 1.6A GS D Static Drain-Source On-Resistance R m DS (ON) 250 V = 4.5V, I = 1.3A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1.1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 401 iss V = 25V, V = 0V DS GS Output Capacitance C 22 pF oss f = 1MHz Reverse Transfer Capacitance C 17 rss Gate Resistance R 2.1 V = 0V, V = 0V, f = 1MHz g DS GS 4.1 Total Gate Charge (VGS = 4.5V) Qg 8.3 Total Gate Charge (V = 10V) Q GS g nC V = 50V, I = 1.6A DS D Gate-Source Charge 1.5 Q gs Gate-Drain Charge 2 Q gd Turn-On Delay Time 6.8 t D(on) Turn-On Rise Time 8.2 t V = 50V, V = 4.5V, r DS GS ns Turn-Off Delay Time t 7.9 R = 6.8I = 1A D(off) G D Turn-Off Fall Time t 3.6 f Reverse Recovery Time t 17 ns rr I = 1.1A, di/dt =100A/s F Reverse Recovery Charge Q 9.8 nC rr Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 DMN10H220L April 2018 Diodes Incorporated www.diodes.com Document number: DS36720 Rev. 4 - 2 NEW PRODUCT