DMN10H220LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low On-Resistance D BV R DSS DS(ON) Max T = +25C C Low Input Capacitance 100V 220m V = 10V 7.5A GS Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: TO252 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic, Green Molding Compound. UL ideal for high-efficiency power management applications. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Load Switch Terminal Connections: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. e3 Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) TO252 (DPAK) D D G D G S S Top View Internal Schematic Top View Pin Out Ordering Information (Note 4) Part Number Case Packaging DMN10H220LK3-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN10H220LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS T = +25C 7.5 C A Continuous Drain Current (Note 5) V = 10V I GS D 4.7 T = +100C C Maximum Body Diode Forward Current (Note 6) 1.5 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 30 A I DM Pulsed Source Current (10s Pulse, Duty Cycle = 1%) 30 A I SM Avalanche Current L = 0.1mH I 4.7 A AS Avalanche Energy L = 0.1mH E 1.1 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 18.7 T = +25C C Total Power Dissipation (Note 5) W P D 7.5 T = +100C C Thermal Resistance, Junction to Ambient (Note 6) 92 R JA C/W Thermal Resistance, Junction to Case (Note 5) 6.7 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 100 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 100V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 1 1.5 2.5 V V V = V , I = 250A GS(TH) DS GS D 179 220 m V = 10V, I = 2A GS D Static Drain-Source On-Resistance R DS(ON) 228 250 m V = 4.5V, I = 1A GS D Diode Forward Voltage V 0.8 1.3 V V = 0V, I = 2A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C 384 iss V = 25V, f = 1MHz, DS Output Capacitance C 23 pF oss V = 0V GS Reverse Transfer Capacitance 17 C rss Gate Resistance 2.4 R V = 0V, V = 0V, f = 1MHz G DS GS 3.7 Total Gate Charge (V = 4.5V) Q GS g 6.7 Total Gate Charge (V = 10V) Q GS g nC V = 50V, I = 1.6A DD D Gate-Source Charge 1.3 Q gs Gate-Drain Charge Q 2 gd Turn-On Delay Time t 6.2 D(ON) Turn-On Rise Time t 8.7 R V = 50V, V = 4.5V, DD GS ns Turn-Off Delay Time t 7.4 R = 6.8, I = 1.0A D(OFF) G D Turn-Off Fall Time t 4.2 F Body Diode Reverse Recovery Time 20 ns tRR IS = 1.1A, dI/dt = 100A/s Body Diode Reverse Recovery Charge 11 nC Q RR Notes: 5. Device mounted on infinite heatsink. 6. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout. 7. Guaranteed by design. Not subject to production testing. 8. Short duration pulse test used to minimize self-heating effect. 2 of 7 DMN10H220LK3 April 2019 Diodes Incorporated www.diodes.com Document number: DS39975 Rev. 3 - 2